IS42S32200E-6BI

The IS42S32200E-6BI is a 64Mbit synchronous DRAM (SDRAM) device from Integrated Silicon Solution, Inc., organized as 2M × 32 with quad-bank architecture. It is designed for 3.3V memory systems and implements a fully synchronous, pipelined interface to support high-speed data transfer in systems requiring parallel DRAM.

With programmable burst lengths and CAS latency options, the IS42S32200E-6BI targets applications that require predictable, clock-referenced memory timing, compact package integration, and operation across a wide operating temperature range.

Key Features

• Core Architecture  Quad-bank synchronous DRAM with pipelined architecture; all signals referenced to a positive clock edge for deterministic timing.
• Memory Organization & Capacity  64 Mbit total capacity configured as 2M × 32 for parallel data paths and efficient word-width alignment.
• Clock and Timing  Speed grade options include 200, 166, 143 and 133 MHz. The -6 speed grade provides an access time of 5.5 ns (CL = 3).
• Programmable Burst & Latency  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequences (sequential/interleave), with selectable CAS latency of 2 or 3 clocks.
• Power  Single 3.3V power supply operation with specified supply range of 3.0 V to 3.6 V.
• Refresh & Self-Refresh  Supports self-refresh modes and 4096 refresh cycles over defined intervals depending on device grade (datasheet grades apply).
• Interface  Parallel memory interface with LVTTL-compatible signaling for synchronous system integration.
• Package & Mounting  90-ball TF-BGA (90-TFBGA, 8 × 13) surface-mount package for compact board-level integration.
• Operating Temperature  Specified ambient operating range of −40°C to +85°C (TA).

Typical Applications

• System Memory Subsystems  Acts as 64 Mbit SDRAM in 3.3V memory systems that require synchronous, clock-referenced DRAM for predictable performance.
• Embedded Controllers and Processors  Provides parallel SDRAM capacity and timing flexibility for embedded designs that use burst transfers and selectable CAS latency.
• High-Speed Buffering  Suitable for applications needing pipelined data transfers and burst operations to buffer or stage data between subsystems.

Unique Advantages

• Flexible Timing Options: Programmable CAS latency (2 or 3 clocks) and multiple speed grades allow tuning for system timing and throughput.
• Burst Mode Flexibility: Support for multiple burst lengths and sequential or interleaved bursts simplifies integration with different access patterns.
• Quad-Bank Architecture: Internal banking hides row access/precharge latencies to improve sustained data throughput in burst operations.
• Compact BGA Package: 90-TFBGA (8×13) package enables high-density board implementations while maintaining a parallel interface.
• Wide Supply Tolerance: Single 3.3V supply with an allowable range of 3.0–3.6 V provides margin for typical 3.3V system rails.
• Industrial Temperature Support: Rated for −40°C to +85°C ambient operation to suit a broad set of temperature environments.

Why Choose IS42S32200E-6BI?

The IS42S32200E-6BI delivers a compact, fully synchronous 64Mbit SDRAM solution with configurable timing and burst behavior for parallel memory systems. Its quad-bank, pipelined architecture and selectable CAS/burst settings make it suitable for designs that require deterministic, clock-referenced memory access and flexible performance tuning.

This device is appropriate for engineers and procurement teams specifying 3.3V SDRAM in products where package density, timing configurability, and operation across −40°C to +85°C are important. Sourced from Integrated Silicon Solution, Inc., it offers a defined feature set and speed grade options to match system-level performance and integration requirements.

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