IS42S32200E-6TL-TR

The IS42S32200E-6TL-TR is a 64‑Mbit synchronous DRAM (SDRAM) device from Integrated Silicon Solution Inc. It implements a quad‑bank synchronous architecture with pipeline operation and a parallel LVTTL interface for clocked, high‑speed memory access.

Targeted for systems requiring 64‑Mbit SDRAM in an 86‑pin TSOP‑II package, the device provides programmable burst modes and CAS latency options to match a range of system timing requirements while operating from a single 3.3 V supply.

Key Features

• Core Architecture Fully synchronous SDRAM with internal four‑bank organization and pipeline architecture; all inputs and outputs are referenced to the rising edge of the clock.
• Memory Organization & Capacity 64‑Mbit capacity implemented as 524,288 × 32 × 4 banks (each bank 16,777,216 bits); internally arranged as 2,048 rows × 256 columns × 32 bits per bank.
• Performance Rated for 166 MHz operation for the -6 grade with programmable CAS latency of 2 or 3 clocks; access time from clock is 5.5 ns at CAS‑3.
• Burst Modes & Sequencing Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); supports burst read/write and burst read/single write operations with burst termination via burst stop or precharge command.
• Refresh & Self‑Refresh AUTO REFRESH and self‑refresh modes supported; refresh options include 4096 cycles per 16 ms (A2 grade) or per 64 ms (commercial, industrial, A1 grade) as specified in the device options.
• Interface & Power LVTTL compatible interface with a single 3.3 V power supply; specified supply range 3.0 V to 3.6 V.
• Timing Programmable CAS latency and random column address capability every clock cycle enable flexible timing tradeoffs to match system requirements.
• Package & Temperature Available in an 86‑pin TSOP‑II (86‑TFSOP, 0.400" / 10.16 mm width) package; commercial operating temperature range 0 °C to +70 °C (TA).

Unique Advantages

• Flexible timing configuration: Programmable CAS latency (2 or 3) and selectable burst lengths allow designers to tune latency and throughput to the application.
• Quad‑bank architecture: Four internal banks and pipeline operation improve sustained data transfer behavior for burst accesses.
• Simplified power implementation: Single 3.3 V supply (3.0–3.6 V range) streamlines power rail requirements in legacy 3.3 V systems.
• Compact TSOP‑II package: 86‑pin TSOP‑II footprint provides a high‑density memory option for space‑constrained boards.
• Robust refresh options: Support for AUTO REFRESH and self‑refresh with documented refresh cycle options provides design flexibility across device grades.

Why Choose IS42S32200E-6TL-TR?

The IS42S32200E-6TL-TR delivers a straightforward 64‑Mbit SDRAM solution with synchronous, quad‑bank architecture and configurable burst/timing behavior—making it suitable for systems requiring predictable, clocked DRAM performance in a compact 86‑pin TSOP‑II package. Its LVTTL interface and single 3.3 V supply simplify integration into existing 3.3 V platforms while programmable CAS and burst options permit tuning for latency or throughput.

This device is appropriate for designs needing a commercially rated (0 °C to +70 °C) 64‑Mbit SDRAM with documented timing, refresh, and package specifications. The IS42S32200E-6TL-TR supports designers who require deterministic SDRAM behavior and flexibility in burst/timing configuration.

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