IS42S32200E-7BL-TR

The IS42S32200E-7BL-TR is a 64‑Mbit synchronous DRAM (SDRAM) device from Integrated Silicon Solution Inc., internally configured as a quad‑bank SDRAM. It implements a fully synchronous, pipelined architecture with all signals referenced to the rising edge of the clock to support high‑speed parallel memory systems.

This device is specified for operation from 0°C to 70°C and supports a single 3.3V power supply (supply range 3.0V–3.6V). The -7 timing option targets a 143 MHz clock frequency with an access time from clock of 5.5 ns (CAS‑latency dependent).

Key Features

• Memory Capacity & Organization — 64 Mbit total, implemented as 524,288 × 32 × 4 banks (quad‑bank SDRAM) for internal banked operation and improved throughput.
• SDRAM, Fully Synchronous — All inputs and outputs are referenced to a positive clock edge; pipeline architecture enables high‑speed data transfer.
• Performance Options — Clock frequency options include 200, 166, 143, and 133 MHz; the -7 device is specified at 143 MHz with an access time from clock of 5.5 ns at CAS‑latency = 3.
• Programmable Burst and CAS — Programmable burst lengths (1, 2, 4, 8, full page) and programmable burst sequence (sequential/interleave); CAS latency selectable between 2 and 3 clocks.
• Power & I/O — Single 3.3V power supply; device I/O is LVTTL‑compatible as specified in the datasheet.
• Refresh & Self‑Refresh — Supports auto refresh and self‑refresh modes; refresh capability listed as 4096 cycles every 16 ms (A2 grade) or 64 ms for Commercial/Industrial/A1 grades in the datasheet options.
• Package — 90‑ball TF‑BGA (90‑TFBGA, 8 × 13) package for compact board footprint and BGA mounting.
• Temperature Range — Commercial temperature rating of 0°C to +70°C as specified for this device variant.

Unique Advantages

• Quad‑bank Architecture: Internal bank structure hides row access/precharge and increases effective throughput for burst operations.
• Flexible Timing and Burst Control: Programmable burst lengths and CAS latency (2 or 3 clocks) allow tuning for system timing and performance tradeoffs.
• High‑speed Operation: 143 MHz device option with sub‑6 ns access timing provides low‑latency data retrieval when configured at CAS‑latency = 3.
• Standard Voltage Compatibility: Operates from 3.0V to 3.6V with a single 3.3V supply reference, matching common 3.3V memory system rails.
• Compact BGA Package: 90‑TFBGA (8×13) package reduces PCB area while providing a robust soldered connection for high‑density board designs.
• Data Integrity Modes: Auto and self‑refresh support accommodate retention and low‑activity scenarios as defined in the device datasheet.

Why Choose IC DRAM 64MBIT PAR 90TFBGA?

This IS42S32200E‑7BL‑TR SDRAM device offers a balanced combination of synchronous, pipelined architecture, quad‑bank organization and flexible timing options, making it suitable for designs that require a 64‑Mbit parallel SDRAM implemented in a compact BGA package. Its specified 0°C to 70°C commercial rating and 3.0V–3.6V supply range align with common 3.3V memory system requirements.

Choose this device when you need a verifiable, datasheet‑specified 64‑Mbit SDRAM with programmable burst behavior, selectable CAS latency, and BGA packaging for space‑constrained boards. The device’s documented refresh, timing, and interface details provide clear design parameters for engineering and procurement decisions.

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