IS42S32200E-7BL

The IS42S32200E-7BL is a 64‑Mbit synchronous DRAM (SDRAM) device organized as 2M × 32 with a quad‑bank architecture and fully synchronous interface. It is designed for operation from a single 3.3 V supply and supports parallel memory interfaces with LVTTL signaling.

This device targets 3.3 V synchronous memory systems that require programmable burst operation, selectable CAS latency, and compact BGA packaging. It delivers system memory capacity and timing flexibility for designs requiring predictable, clock‑referenced DRAM behavior.

Key Features

• Memory Architecture  64‑Mbit SDRAM organized as 2M × 32 with four internal banks to improve access efficiency and enable bank interleaving.
• Performance  Clock frequency supported up to 143 MHz for the -7 speed grade and an access time from clock of 5.5 ns for CAS‑latency configurations.
• Programmable Burst and CAS  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); programmable CAS latency of 2 or 3 clocks.
• Refresh and Self‑Refresh  Includes AUTO REFRESH and self‑refresh support with specified refresh cycles (4096 refresh cycles per refresh interval for specified grades in the datasheet).
• Interface and Signaling  Fully synchronous operation with all signals referenced to the rising clock edge and LVTTL input/output signaling.
• Power  Single 3.3 V supply with operating range listed as 3.0 V to 3.6 V in the product specifications.
• Package and Temperature  90‑ball TF‑BGA (8 × 13) package; commercial operating temperature range 0 °C to +70 °C (TA) for this product variant.

Typical Applications

• 3.3 V Synchronous Memory Systems  Use as main or auxiliary SDRAM in systems designed around a 3.3 V clocked memory bus requiring 64‑Mbit capacity.
• Buffered Data Storage  Suitable where parallel, clock‑aligned burst transfers and predictable CAS latency are needed for buffering or temporary storage.
• Compact Board Designs  The 90‑TFBGA (8×13) package supports high‑density PCB layouts where board real estate and routing for parallel memory are considerations.

Unique Advantages

• Quad‑Bank Architecture:  Internal four‑bank structure enables improved access throughput by hiding row access/precharge operations.
• Flexible Timing Options:  Programmable CAS latency (2 or 3) and multiple burst lengths provide design flexibility to match system timing and throughput needs.
• Clocked Predictability:  Fully synchronous, clock‑referenced operation simplifies timing analysis and integration into clocked memory subsystems.
• Single 3.3 V Supply:  Operation from a single VCC rail (3.0–3.6 V) reduces power‑rail complexity in 3.3 V system architectures.
• Compact BGA Packaging:  90‑ball TF‑BGA (8×13) package supports dense mounting and routing for space‑constrained designs.

Why Choose IS42S32200E-7BL?

The IS42S32200E-7BL provides a straightforward, clocked 64‑Mbit SDRAM option for systems needing predictable synchronous memory behavior, programmable burst modes, and selectable CAS latency. Its quad‑bank organization and LVTTL interface enable designers to implement bursty or interleaved access patterns while maintaining timing determinism.

This device is suited to designers and procurement teams specifying 3.3 V synchronous DRAM with a compact TF‑BGA footprint and commercial temperature range. It offers configurable timing and burst options to match a variety of parallel memory subsystem requirements while simplifying power‑rail design with a single 3.3 V supply.

Request a quote or submit an inquiry to receive pricing and availability information for the IS42S32200E-7BL and to discuss suitability for your specific design requirements.