IS42S32200E-7TL

The IS42S32200E-7TL is a 64‑Mbit synchronous DRAM organized as 2M × 32 with a quad‑bank architecture and a fully synchronous, positive‑edge referenced clock. It provides parallel SDRAM memory for 3.3V synchronous memory systems requiring high‑speed, pipelined data transfer.

Targeted for commercial‑temperature designs, this device delivers programmable burst operation, selectable CAS latency, and self‑refresh capability to support a range of commercial embedded memory subsystems and high‑throughput buffer applications.

Key Features

• Memory Architecture — 64 Mbit organized as 2,048K × 32 with 4 internal banks to improve access efficiency and support pipelined operation.
• Synchronous SDRAM Core — Fully synchronous operation with all signals referenced to the rising clock edge and LVTTL interface for parallel SDRAM systems.
• Performance — Rated for 143 MHz operation (‑7 speed grade) with an access time from clock as low as 5.5 ns (CAS latency = 3).
• Programmable Burst and Latency — Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave); CAS latency configurable (2 or 3 clocks).
• Refresh and Power — Supports AUTO REFRESH and self‑refresh modes; commercial grade implements 4,096 refresh cycles per 64 ms. Single 3.3V supply operation with specified supply range 3.0 V to 3.6 V.
• Package — 86‑pin TSOP‑II package (0.400", 10.16 mm width) to minimize board area for dense memory layouts.
• Operating Range — Commercial operating temperature: 0°C to +70°C (TA).

Typical Applications

• Commercial embedded memory subsystems — Provides synchronous 64‑Mbit memory for systems designed around a 3.3V memory domain.
• High‑throughput buffer memory — Quad‑bank SDRAM organization and pipelined transfers support buffering in data‑path applications.
• Parallel SDRAM interfaces — LVTTL parallel interface and programmable burst modes simplify integration with parallel memory controllers.

Unique Advantages

• Quad‑bank, pipelined architecture — Improves effective throughput by enabling hidden row access and overlapped operations.
• Speed‑grade matched — The ‑7 device is specified for 143 MHz operation with a 5.5 ns access time at CAS‑3, enabling predictable timing in system designs.
• Flexible burst operation — Multiple burst lengths and sequences provide flexibility for varied data access patterns and controller designs.
• Single 3.3V power domain — Simplifies power supply design with a defined 3.0–3.6 V supply range.
• Compact TSOP‑II package — 86‑pin TSOP‑II minimizes board footprint while providing full parallel SDRAM connectivity.
• Commercial temperature rating — 0°C to +70°C operating range for standard commercial deployments.

Why Choose IS42S32200E-7TL?

The IS42S32200E-7TL combines a 64‑Mbit SDRAM core, quad‑bank organization, and programmable burst/latency features to deliver deterministic synchronous memory performance for commercial 3.3V systems. Its 143 MHz speed grade and 5.5 ns access time (CAS‑3) provide the timing characteristics needed for pipelined, high‑throughput applications.

This device is suited to designers seeking a compact, parallel SDRAM solution in an 86‑pin TSOP‑II package with built‑in refresh modes and flexible burst control, enabling straightforward integration into commercial embedded memory subsystems and buffering applications.

If you would like pricing, lead‑time, or technical availability for the IS42S32200E-7TL, request a quote or submit an inquiry to obtain a formal quotation and additional ordering information.