IS42S32200E-7TLI

The IS42S32200E-7TLI is a 64‑Mbit synchronous DRAM (SDRAM) device organized as 2M × 32 with a quad‑bank, pipelined architecture. It provides a parallel memory interface and LVTTL signaling for use in 3.3V memory systems.

Designed for high‑speed, synchronous memory applications, this device serves embedded and industrial designs that require predictable timing, programmable burst access, and extended temperature operation to −40°C to +85°C.

Key Features

• Core & architecture  64‑Mbit SDRAM organized as 2M × 32 with a 4‑bank, pipelined architecture and fully synchronous operation referenced to the positive clock edge.
• Performance  Supports clock frequencies up to 143 MHz (device timing option), with an access time of 5.5 ns and programmable CAS latency (2 or 3 clocks).
• Memory & burst control  Programmable burst lengths (1, 2, 4, 8, full page) and programmable burst sequence (sequential/interleave); burst read/write and burst read/single write capabilities with burst termination commands.
• Interface  Parallel memory interface with LVTTL signaling and random column address capability every clock cycle for sustained throughput.
• Power  Single 3.3 V power supply with specified operating range of 3.0 V to 3.6 V.
• Refresh & low‑power modes  Auto refresh and self‑refresh support; refresh cycle options include 4096 cycles per 16 ms (A2 grade) or 4096 cycles per 64 ms (Commercial/Industrial/A1 grades) as documented.
• Package & temperature  Available in an 86‑pin TSOP‑II (86‑TFSOP, 0.400", 10.16 mm width) package and specified for operation from −40°C to +85°C (TA).

Typical Applications

• Embedded system memory  Provides synchronous 64‑Mbit DRAM for embedded platforms that use parallel SDRAM and 3.3 V supply rails.
• Industrial control  Suitable for control and automation hardware that require extended temperature range and deterministic memory timing.
• Data buffering and temporary storage  Used where high‑speed burst transfers and random column access every clock cycle are required for buffering or intermediate data storage.

Unique Advantages

• Synchronous pipelined design: Enables predictable timing and high throughput by referencing all signals to the positive clock edge.
• Flexible burst configuration: Programmable burst lengths and sequences let designers optimize memory transfers for specific access patterns.
• Wide voltage tolerance: Operates across 3.0 V to 3.6 V, aligning with common 3.3 V system supplies.
• Extended temperature rating: Specified operation from −40°C to +85°C for deployments in thermally demanding environments.
• Compact TSOP‑II package: 86‑pin TSOP‑II (10.16 mm width) simplifies PCB layout in space‑constrained designs.
• Refresh and low‑power support: Auto‑refresh and self‑refresh modes support system reliability and power management strategies.

Why Choose IC DRAM 64MBIT PAR 86TSOP II?

The IS42S32200E-7TLI delivers a compact, synchronous 64‑Mbit DRAM solution with programmable burst control, LVTTL interface, and a 4‑bank pipelined architecture for predictable, high‑speed memory access. Its 3.0–3.6 V supply range and −40°C to +85°C operating window make it appropriate for embedded and industrial designs that require reliable, parallel SDRAM operation.

This device is well suited to designers seeking a proven SDRAM building block with configurable timing (CAS latency and burst modes), standard refresh options, and a space‑efficient 86‑pin TSOP‑II package to simplify integration into legacy or new 3.3 V memory subsystems.

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