IS42S32200L-6BI

The IS42S32200L-6BI is a 64 Mbit volatile SDRAM device organized as 2M × 32 with a parallel memory interface in a 90‑TFBGA (8×13) package. It is specified for operation from -40°C to 85°C, supports a clock frequency up to 166 MHz, and has an access time of 5.4 ns with a supply voltage range of 3.0 V to 3.6 V.

Engineered as external parallel DRAM, this device is intended for systems requiring compact, high-speed SDRAM memory in a ball grid array package and predictable electrical and thermal operating ranges.

Key Features

• Memory Core 64 Mbit SDRAM organized as 2M × 32, providing a wide 32-bit data path for parallel access.
• Performance Supports clock frequencies up to 166 MHz with a specified access time of 5.4 ns for timed, high-throughput access.
• Voltage and Power Operates from 3.0 V to 3.6 V supply range for compatibility with 3 V-class system rails.
• Package 90‑TFBGA (8×13) supplier device package for compact board-level footprint and BGA mounting.
• Operating Temperature Rated for -40°C to 85°C (TA), supporting extended ambient temperature operation.
• Memory Format and Interface Volatile DRAM with a parallel interface suitable for external system memory or buffering.

Typical Applications

• System Memory Expansion Provides external parallel SDRAM for devices that need additional working memory or buffering.
• Data Buffering and Temporary Storage Used where a 32-bit parallel memory interface and predictable access timing are required for transient data storage.
• Compact Board-Level Integration Suits designs that require a denser memory solution in a 90‑TFBGA package while maintaining standard SDRAM signaling.

Unique Advantages

• Wide 32‑bit Organization: 2M × 32 layout supports wide parallel data transfers, simplifying bus interfacing for 32-bit systems.
• High-Frequency Operation: 166 MHz clock capability and 5.4 ns access time enable timely access for bandwidth-sensitive tasks.
• Extended Temperature Range: Specified -40°C to 85°C operation for deployment across a broad ambient range.
• 3.0–3.6 V Supply Range: Compatible with common 3 V-class system rails, easing power supply design.
• Compact BGA Package: 90‑TFBGA (8×13) package reduces PCB area compared with larger through-hole or SOIC options.

Why Choose IS42S32200L-6BI?

IS42S32200L-6BI positions itself as a straightforward parallel SDRAM solution offering a 64 Mbit capacity with a 2M × 32 organization, 166 MHz clock support, and defined 5.4 ns access timing. Its 90‑TFBGA package and 3.0–3.6 V supply range provide a compact, system-friendly memory option for designs that require external volatile DRAM within the stated temperature envelope.

This device is suited to designers and engineers who need predictable parallel DRAM behavior, a wide data interface, and a compact BGA footprint for board-level integration. Its specified electrical and thermal parameters support reliable deployment where these explicit characteristics match system requirements.

Request a quote or submit an inquiry for pricing and availability of the IS42S32200L-6BI to evaluate it for your design needs. Refer to the device datasheet for complete technical specifications and ordering information.