IS42S32200L-6BLI

The IS42S32200L-6BLI is a 64 Mbit volatile SDRAM device organized as 2M × 32 with a parallel memory interface. It implements synchronous DRAM (SDRAM) technology and is specified with a 166 MHz clock frequency and a 5.4 ns access time.

Designed for compact board-level integration, the device is offered in a 90‑TFBGA (8×13) package, operates from a 3.0 V to 3.6 V supply, and supports an ambient temperature range of −40°C to 85°C.

Key Features

• Memory Architecture 64 Mbit capacity organized as 2M × 32, providing a 32‑bit data width for each access.
• SDRAM Technology Synchronous DRAM format with a parallel memory interface for conventional SDRAM bus integration.
• Performance Specified for a 166 MHz clock frequency with an access time of 5.4 ns.
• Power Operates from a 3.0 V to 3.6 V supply range.
• Package 90‑TFBGA package case (8×13) for space-efficient surface mounting.
• Temperature Range Operating ambient temperature specified from −40°C to 85°C (TA).
• Memory Format Volatile DRAM memory format suitable for temporary data storage in embedded systems.

Unique Advantages

• Compact 90‑TFBGA footprint: Enables space-efficient board designs while providing a full 32‑bit data path.
• Wide 32‑bit organization (2M × 32): Supports wider parallel transfers to match 32‑bit memory buses.
• High-speed operation: 166 MHz clock and 5.4 ns access time deliver measured synchronous performance for time-sensitive memory accesses.
• Extended operating range: −40°C to 85°C ambient rating supports deployment across a broad set of environmental conditions.
• Standard 3.0–3.6 V supply: Aligns with common 3V power rails to simplify power design.
• Parallel interface: Straightforward integration into parallel SDRAM memory systems.

Why Choose IS42S32200L-6BLI?

The IS42S32200L-6BLI provides a compact, synchronous DRAM solution offering a 64 Mbit capacity with a 32‑bit data organization and 166 MHz operation. Its combination of measured access performance, standard 3.0–3.6 V operation, and a 90‑TFBGA package makes it suitable for designs that require a moderate-capacity parallel SDRAM in a small footprint.

This device is appropriate for designers seeking a verified SDRAM building block with defined electrical and thermal limits, enabling predictable integration into systems that use parallel SDRAM memory architectures.

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