IS42S32200L-6BLI-TR

The IS42S32200L-6BLI-TR is a 64 Mbit volatile DRAM device implemented as SDRAM with a 2M × 32 memory organization. Manufactured by ISSI (Integrated Silicon Solution Inc), it provides parallel memory access in a compact 90-TFBGA (8 × 13) package.

With a 166 MHz clock frequency and 5.4 ns access time, this device is intended for systems that require parallel SDRAM memory with defined timing and operating ranges. It operates from 3.0 V to 3.6 V and supports an ambient temperature range of −40 °C to 85 °C (TA).

Key Features

• Memory Architecture
  2M × 32 organization providing 64 Mbit total density in a single SDRAM device.
• SDRAM Technology
  Synchronous DRAM offering standard parallel SDRAM interface and timing behavior.
• Performance
  Supports a 166 MHz clock frequency with a 5.4 ns access time for defined read/write timing.
• Power
  Operates from a 3.0 V to 3.6 V supply voltage range.
• Package
  Supplied in a 90-TFBGA (8 × 13) package for compact board-level integration.
• Environmental Range
  Rated for operation over an ambient temperature range of −40 °C to 85 °C (TA).
• Interface
  Parallel memory interface suited to designs expecting parallel SDRAM connectivity.

Typical Applications

• Embedded memory systems
  Used where a 64 Mbit parallel SDRAM (2M × 32) is required for system working memory or buffering at defined access times.
• Consumer and industrial electronics
  Applicable in designs that require a compact 90-TFBGA packaged SDRAM operating from 3.0 V to 3.6 V and across −40 °C to 85 °C.
• Board-level memory expansion
  Suitable for applications needing a parallel SDRAM device with 166 MHz clock capability and 5.4 ns access performance.

Unique Advantages

• Defined timing performance: 166 MHz clock and 5.4 ns access time provide clear, verifiable timing parameters for system integration and memory timing budgets.
• Compact BGA footprint: 90-TFBGA (8 × 13) package enables higher board density and predictable routing for parallel memory interfaces.
• Wide operating voltage range: 3.0 V to 3.6 V supply range accommodates common 3 V system rails.
• Extended ambient temperature: Rated −40 °C to 85 °C (TA) for deployment across a range of environments.
• Straightforward memory sizing: 2M × 32 organization provides clear capacity and bus-width behavior for system architects.

Why Choose IC DRAM 64MBIT PARALLEL 90TFBGA?

The IS42S32200L-6BLI-TR combines a defined SDRAM architecture (2M × 32) with measurable performance characteristics (166 MHz clock, 5.4 ns access time) and a compact 90-TFBGA package. These attributes make it appropriate for designs that require predictable parallel memory behavior, compact board-space usage, and standard 3 V supply operation.

This part is suitable for engineers and procurement teams specifying board-level parallel SDRAM where capacity, timing, package, supply voltage, and operating temperature are primary selection criteria. Its specification set supports straightforward integration and long-term use in systems operating within the listed electrical and environmental limits.

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