IS42S32200L-6TLI

IC DRAM 64MBIT PAR 86TSOP II
Part Description

IC DRAM 64MBIT PAR 86TSOP II

Quantity 948 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package86-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging86-TFSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization2M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS42S32200L-6TLI – IC DRAM 64MBIT PAR 86TSOP II

The IS42S32200L-6TLI is a 64 Mbit volatile SDRAM organized as 2M × 32 with a parallel memory interface. It delivers synchronous DRAM operation with a 166 MHz clock rate and a 5.4 ns access time, packaged in an 86‑pin TSOP II footprint.

This device is intended for designs that require compact board-level DRAM in a standard TSOP II package and support for 3.0 V to 3.6 V supply voltages and an operating temperature range from −40°C to 85°C.

Key Features

  • Memory Core 64 Mbit SDRAM organized as 2M × 32 for parallel data paths and straightforward system integration.
  • Performance Synchronous operation with a 166 MHz clock frequency and a 5.4 ns access time for responsive memory transactions.
  • Interface Parallel DRAM interface suitable for board-level memory implementations requiring parallel data access.
  • Power Operates from 3.0 V to 3.6 V, supporting standard 3.3 V system rail compatibility.
  • Package Available in an 86‑pin TSOP II (86‑TFSOP, 0.400", 10.16 mm width) package for compact PCB layouts.
  • Environmental Range Rated for operation from −40°C to 85°C (TA), enabling use across a wide ambient temperature span.

Typical Applications

  • Board-level Memory Expansion Used as parallel DRAM to add 64 Mbit of volatile storage on system PCBs where TSOP II mounting is required.
  • Temporary Data and Buffer Storage Provides volatile SDRAM storage suitable for temporary data buffering and frame buffering in designs using parallel memory interfaces.
  • Compact PCB Designs The 86‑TSOP II package supports space-constrained boards that require a standardized TSOP II footprint.

Unique Advantages

  • Standard Parallel SDRAM Architecture: 2M × 32 organization offers a clear mapping for parallel data paths and system-level memory design.
  • Measurable Performance: 166 MHz clock frequency and 5.4 ns access time provide quantifiable timing for system timing budgets.
  • Wide Supply Voltage Range: 3.0 V to 3.6 V operation aligns with common 3.3 V system rails for straightforward power integration.
  • Compact TSOP II Package: 86‑pin TSOP II (0.400", 10.16 mm width) enables high-density board layouts while maintaining a conventional package footprint.
  • Extended Temperature Support: −40°C to 85°C operating range supports deployments across a broad ambient temperature envelope.

Why Choose IS42S32200L-6TLI?

The IS42S32200L-6TLI positions itself as a straightforward, board-level SDRAM option where a 64 Mbit parallel memory device in an 86‑TSOP II package is required. Its documented clock frequency, access time, voltage range, and temperature rating make it suitable for designs that need defined electrical and thermal characteristics.

This device is appropriate for engineers specifying parallel SDRAM for compact PCB implementations, buffer memory, or temporary data storage where package compatibility and clear performance metrics are primary considerations.

Request a quote or submit an inquiry to receive pricing, availability, and lead-time information for IS42S32200L-6TLI.

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