IS42S32200L-7BLI
| Part Description |
IC DRAM 64MBIT PAR 90TFBGA |
|---|---|
| Quantity | 289 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 90-TFBGA (8x13) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 90-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 2M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS42S32200L-7BLI – IC DRAM 64MBIT PAR 90TFBGA
The IS42S32200L-7BLI from Integrated Silicon Solution Inc (ISSI) is a 64 Mbit volatile SDRAM organized as 2M × 32 with a parallel memory interface. It delivers synchronous DRAM operation with a rated clock frequency of 143 MHz and an access time of 5.4 ns, designed for systems that require mid-density parallel SDRAM storage.
Supplied in a compact 90‑TFBGA (8 × 13) package and supporting a 3.0 V to 3.6 V supply range, this device is specified for operation across an ambient temperature span of −40 °C to 85 °C.
Key Features
- Memory Architecture Organized as 2M × 32 for a total memory capacity of 64 Mbit; standard parallel DRAM format for direct bus interfacing.
- SDRAM Technology Synchronous DRAM core with a specified clock frequency of 143 MHz and an access time of 5.4 ns.
- Voltage and Power Operates from a 3.0 V to 3.6 V supply window.
- Package Supplied in a 90‑TFBGA (8 × 13) package suitable for compact board-level implementations.
- Temperature Range Qualified for ambient operation from −40 °C to 85 °C (TA).
- Interface Parallel memory interface compatible with parallel DRAM system designs.
Unique Advantages
- Defined density and organization: 64 Mbit capacity arranged as 2M × 32 simplifies memory mapping for parallel bus architectures.
- Synchronous operation at 143 MHz: Provides a clear timing specification (5.4 ns access time) for predictable system performance planning.
- Wide supply tolerance: 3.0 V to 3.6 V supply range accommodates common 3 V system rails.
- Compact BGA footprint: 90‑TFBGA (8 × 13) package reduces PCB area for space-constrained designs.
- Extended ambient temperature: −40 °C to 85 °C rating supports a broad range of environmental conditions.
- Vendor-provided specification set: Core electrical and timing parameters are defined for system integration and validation.
Why Choose IS42S32200L-7BLI?
The IS42S32200L-7BLI targets designs that require a mid-density parallel SDRAM device with clearly specified timing, supply, and thermal characteristics. Its 2M × 32 organization and 64 Mbit capacity make it suitable for systems needing straightforward parallel memory mapping, while the 90‑TFBGA package offers a compact board-level option.
For engineers and procurement teams evaluating memory components, this SDRAM provides verifiable performance and environmental specs from a recognized memory supplier, enabling predictable integration into compatible parallel DRAM architectures.
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