IS42S32200L-7TLI

IC DRAM 64MBIT PAR 86TSOP II
Part Description

IC DRAM 64MBIT PAR 86TSOP II

Quantity 91 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package86-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging86-TFSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization2M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS42S32200L-7TLI – IC DRAM 64Mbit Parallel 86-TSOP II

The IS42S32200L-7TLI is a volatile SDRAM device organized as 2M × 32 for a total density of 64 Mbit. It provides a parallel memory interface and timing characteristics suitable for systems that require moderate-density synchronous DRAM.

Key technical attributes include a 143 MHz clock frequency rating, a 5.4 ns access time, a 3.0 V to 3.6 V supply range, and an 86-TSOP II package (0.400" / 10.16 mm width), supporting operation from −40 °C to 85 °C.

Key Features

  • Memory Architecture  Organized as 2M × 32 for a total memory size of 64 Mbit, implemented as DRAM with SDRAM technology.
  • Performance  Rated for a 143 MHz clock frequency and an access time of 5.4 ns, enabling synchronous parallel memory operation at the specified timing.
  • Interface  Parallel memory interface supporting standard SDRAM control and data paths.
  • Power  Operates from a 3.0 V to 3.6 V supply range.
  • Package  Delivered in an 86-TSOP II (86-TFSOP) package with 0.400" (10.16 mm) width suitable for surface-mount applications.
  • Operating Temperature  Specified for −40 °C to 85 °C (TA), suitable for a broad range of ambient conditions.

Typical Applications

  • System Memory  Used as synchronous parallel DRAM in systems requiring a 64 Mbit memory bank with 2M × 32 organization.
  • Buffer and Temporary Storage  Applicable where a parallel SDRAM interface and the specified timing (143 MHz / 5.4 ns) are required for frame or data buffering.
  • Industrial Electronics  Supports operation across −40 °C to 85 °C, matching temperature requirements of many industrial environments.

Unique Advantages

  • Compact 86-TSOP II package:  Surface-mount 86-TSOP II (0.400" / 10.16 mm) packaging provides a space-efficient footprint for board-level integration.
  • Defined synchronous performance:  143 MHz clock rating and 5.4 ns access time give predictable SDRAM timing for parallel memory designs.
  • Moderate high-density memory:  64 Mbit capacity (2M × 32) enables consolidation of multiple lower-density devices into a single component where applicable.
  • Standard DDR supply window:  3.0 V to 3.6 V supply range aligns with common 3 V-class system power rails.
  • Wide operating temperature:  −40 °C to 85 °C ambient rating supports deployment in varied thermal environments.

Why Choose IS42S32200L-7TLI?

The IS42S32200L-7TLI positions as a straightforward, specification-driven SDRAM component for designs that require a 64 Mbit parallel DRAM in an 86-TSOP II package. Its documented clock and access timing, memory organization, and operating ranges make it suitable for engineers seeking a deterministic DRAM element to meet defined system memory needs.

This device is appropriate for designs where matching electrical, timing, and thermal specifications to system requirements is a priority. It offers a clear set of hardware parameters for procurement, integration, and long-term support based on the supplied technical specifications.

For pricing, availability, or to request a quote, please contact sales to submit your requirements and receive a formal quotation.

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