IS42S32200L-7BLI-TR
| Part Description |
IC DRAM 64MBIT PAR 90TFBGA |
|---|---|
| Quantity | 888 Available (as of May 4, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 90-TFBGA (8x13) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 90-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 2M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS42S32200L-7BLI-TR – IC DRAM 64MBIT PAR 90TFBGA
The IS42S32200L-7BLI-TR is a 64 Mbit volatile SDRAM device from Integrated Silicon Solution Inc (ISSI). It implements a parallel SDRAM architecture with a 2M × 32 memory organization and is supplied in a 90-TFBGA package.
Designed for systems requiring a 64 Mbit parallel DRAM component, the device provides a 143 MHz clock rate, 5.4 ns access time, a 3.0 V–3.6 V supply range, and an operating temperature range of -40°C to 85°C.
Key Features
- Core / Memory SDRAM volatile memory organized as 2M × 32 for a total of 64 Mbit storage.
- Performance Supports a clock frequency of 143 MHz with an access time of 5.4 ns, providing defined timing characteristics for system integration.
- Interface Parallel memory interface suitable for parallel DRAM system architectures.
- Power Rated operating supply voltage from 3.0 V to 3.6 V.
- Package 90-TFBGA package in an 8×13 footprint for compact board-level mounting.
- Temperature Range Operating ambient temperature specified from -40°C to 85°C (TA).
- Memory Format DRAM (volatile) memory format.
- Manufacturer Integrated Silicon Solution Inc (ISSI).
Unique Advantages
- Predictable timing performance: The specified 143 MHz clock and 5.4 ns access time provide defined timing for system design and memory timing budgets.
- Parallel memory density: 2M × 32 organization delivers 64 Mbit of DRAM capacity in a single device, simplifying board-level memory architecture.
- Wide operating range: -40°C to 85°C ambient rating supports deployments across a broad temperature envelope.
- Compact BGA footprint: 90-TFBGA (8×13) package enables space-efficient mounting on compact PCBs.
- Flexible supply range: 3.0 V to 3.6 V rating aligns with common 3 V-class power rails.
Why Choose IC DRAM 64MBIT PAR 90TFBGA?
The IS42S32200L-7BLI-TR combines defined SDRAM performance (143 MHz clock, 5.4 ns access time) with a 64 Mbit 2M × 32 organization and a compact 90-TFBGA package, making it suitable for designs that require predictable parallel DRAM behavior in a small footprint. Its 3.0–3.6 V supply range and -40°C to 85°C operating temperature provide design flexibility across varied environments.
Manufactured by Integrated Silicon Solution Inc (ISSI), this device is positioned for engineers and procurement teams seeking a straightforward, specification-driven parallel SDRAM component for systems that require a 64 Mbit volatile memory solution.
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