IS42S32200L-6BL-TR

The IS42S32200L-6BL-TR is a 64-megabit synchronous DRAM organized as 2M x 32, designed for applications requiring high-speed parallel memory access. Built on proven SDRAM technology, this memory solution operates at clock frequencies up to 166MHz with a fast 5.4ns access time, making it suitable for embedded systems, consumer electronics, and industrial equipment that need reliable volatile memory storage.

Key Features

• Memory Architecture - 64Mbit capacity organized as 2M x 32 configuration provides efficient word-wide data access for 32-bit processor architectures and data-intensive applications.
• High-Speed Operation - 166MHz clock frequency with 5.4ns access time delivers rapid data throughput for time-sensitive operations and system responsiveness.
• Standard SDRAM Interface - Parallel memory interface simplifies integration with existing processor and controller designs using conventional DRAM protocols.
• Power Supply - 3V to 3.6V operating voltage range accommodates standard logic levels and reduces power consumption compared to older 5V memory technologies.
• Compact Package - 90-pin TFBGA package (8mm x 13mm) offers space-efficient board layout for applications with tight PCB real estate constraints.
• Operating Temperature Range - 0°C to 70°C operational range supports commercial-grade applications in controlled environments.

Typical Applications

• Consumer Electronics - This SDRAM provides working memory for set-top boxes, digital TVs, and multimedia devices where the 32-bit wide interface enables efficient video buffer management and frame processing.
• Embedded Computing - The parallel memory interface integrates directly with 32-bit microcontrollers and processors in industrial control systems, offering predictable performance for real-time embedded applications.
• Networking Equipment - The 64Mbit capacity serves as packet buffer memory in routers, switches, and network appliances where fast access times support low-latency data forwarding.
• Office Equipment - Printers, scanners, and copiers utilize this DRAM for image buffering and data processing where the TFBGA package fits compact device designs.

Unique Advantages

• Proven SDRAM Technology: Leverages mature synchronous DRAM architecture for predictable performance characteristics and widespread design support.
• Cost-Effective Volatile Memory: DRAM technology delivers large memory capacity at lower cost per bit compared to SRAM, optimizing bill of materials for price-sensitive applications.
• Simplified Design Integration: Standard parallel interface eliminates the need for complex memory controllers or protocol translation logic required by serial memory types.
• 32-Bit Data Path: Word-wide organization reduces the number of memory access cycles needed for 32-bit data transfers, improving overall system efficiency.
• Space-Efficient Footprint: TFBGA package provides high pin density in a compact form factor, maximizing usable PCB area for other components.
• Wide Voltage Tolerance: 3V to 3.6V operating range provides flexibility in power supply design and compatibility with various logic families.

Why Choose IS42S32200L-6BL-TR?

The IS42S32200L-6BL-TR delivers a balance of capacity, speed, and cost-effectiveness for commercial embedded systems requiring parallel memory access. The 2M x 32 organization matches well with 32-bit processor architectures, while the 166MHz operation and 5.4ns access time support responsive system performance. The compact TFBGA package is particularly suited for space-constrained designs in consumer and industrial products.

This memory solution is appropriate for designs operating in controlled temperature environments (0°C to 70°C) where proven SDRAM technology and standard parallel interfaces simplify development and reduce integration risk.

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For pricing, availability, and technical specifications tailored to your application requirements, contact our sales team. We can assist with design considerations, supply chain planning, and volume procurement to support your product development timeline.