IS42S32200L-6BI-TR

IC DRAM 64MBIT PARALLEL 90TFBGA
Part Description

IC DRAM 64MBIT PARALLEL 90TFBGA

Quantity 962 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package90-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging90-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization2M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS42S32200L-6BI-TR – IC DRAM 64 Mbit Parallel 90TFBGA

The IS42S32200L-6BI-TR is a volatile SDRAM device providing 64 Mbit of parallel memory in a 2M × 32 organization. It implements a parallel SDRAM architecture with a clock frequency of up to 166 MHz and an access time of 5.4 ns.

Designed for board-mounted applications, the device is supplied in a 90-TFBGA (8×13) package and operates from a 3.0 V to 3.6 V supply across an operating temperature range of -40°C to 85°C.

Key Features

  • Memory Architecture 64 Mbit SDRAM organized as 2M × 32, providing parallel memory lanes for wide data paths.
  • Performance 166 MHz clock frequency and a 5.4 ns access time for low-latency read/write operations.
  • Interface Parallel SDRAM interface suitable for designs requiring synchronous parallel memory access.
  • Power Operates from a 3.0 V to 3.6 V supply range to match common 3 V system rails.
  • Package 90-TFBGA (8×13) supplier device package for compact, surface-mount board integration.
  • Temperature Range Rated for -40°C to 85°C (TA) to support a wide range of ambient operating conditions.

Typical Applications

  • Embedded Systems — Provides 64 Mbit of volatile SDRAM for embedded designs that require parallel memory access and predictable timing.
  • Industrial Equipment — Temperature rating from -40°C to 85°C supports deployment in temperature-challenging environments.
  • Compact Memory Modules — 90-TFBGA packaging and 3.0–3.6 V supply enable dense board-level memory integration.
  • High‑throughput Buffers — 2M × 32 organization combined with 166 MHz operation supports applications needing wide, high-speed buffering.

Unique Advantages

  • Wide operating temperature range: -40°C to 85°C supports designs intended for industrial and other temperature-demanding contexts.
  • High-speed synchronous operation: 166 MHz clock and 5.4 ns access time enable faster data transactions compared to slower memory options.
  • Standard 3 V power domain: 3.0 V to 3.6 V supply range aligns with common system power rails for simpler power design.
  • Space-efficient BGA package: 90-TFBGA (8×13) offers a compact footprint with high pin density for board-level space savings.
  • Parallel 32-bit data path: 2M × 32 organization provides a wide data interface for applications that benefit from parallel transfers.

Why Choose IS42S32200L-6BI-TR – IC DRAM 64 Mbit Parallel 90TFBGA?

The IS42S32200L-6BI-TR combines synchronous parallel SDRAM architecture, a 2M × 32 memory organization and 166 MHz operation to deliver a compact, high-throughput memory option in a 90-TFBGA package. Its 3.0–3.6 V supply range and -40°C to 85°C operating range make it suitable for designs that require robust electrical and thermal operating windows.

Manufactured by Integrated Silicon Solution Inc., this device is intended for engineers and procurement teams seeking a verified 64 Mbit parallel SDRAM for board-level memory expansion, buffering, or other embedded memory roles where predictable timing and compact packaging are important.

Request a quote or contact sales to discuss availability, lead times and pricing for the IS42S32200L-6BI-TR.

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