IS42S32200E-7TLI-TR

The IS42S32200E-7TLI-TR is a 64‑Mbit synchronous DRAM (SDRAM) device from Integrated Silicon Solution, Inc. It is organized as 2M × 32 with a quad‑bank architecture and a fully synchronous pipeline design for high‑speed, predictable memory access.

Designed for systems that require a parallel LVTTL SDRAM interface at a single 3.3V supply, this device addresses applications where deterministic, burstable memory transfer and industrial temperature operation (‑40°C to +85°C) are required.

Key Features

• Memory Architecture Organized as 2M × 32 with four internal banks to provide a total 64‑Mbit capacity and improved pipelined access.
• Synchronous Operation & Clocking Fully synchronous design with all signals referenced to the rising clock edge; -7 timing grade supports a 143 MHz clock frequency.
• Performance Timing Access time of 5.5 ns for CAS latency = 3 (‑7 grade); programmable CAS latency options of 2 or 3 clocks.
• Interface & Burst Control Parallel LVTTL interface with programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave). Supports burst read/write and burst read/single write operations with burst termination commands.
• Refresh & Self‑Refresh Supports auto refresh and self‑refresh modes; 4096 refresh cycles every 16 ms for A2 grade or every 64 ms for Commercial, Industrial, and A1 grades as specified.
• Power Single 3.3 V power supply operation with a specified voltage range of 3.0 V to 3.6 V.
• Package & Temperature Range Supplied in an 86‑TSOP II (86‑TFSOP, 0.400", 10.16 mm width) package and specified for operation from ‑40°C to +85°C (TA).
• System Efficiency Internal bank architecture and support for random column address every clock cycle help optimize throughput in pipelined memory systems.

Typical Applications

• Embedded systems — Provides parallel SDRAM storage for microcontrollers and processors requiring synchronous burst transfers at 3.3 V.
• Industrial control equipment — Suitable for systems needing SDRAM operation across an industrial temperature range (‑40°C to +85°C).
• Communications and networking — Serves as high‑speed volatile memory for packet buffering and temporary data storage with programmable burst modes.
• Legacy parallel memory designs — Drop‑in SDRAM option for designs using a parallel LVTTL SDRAM interface and TSOP‑II packaging.

Unique Advantages

• Quad‑bank pipeline architecture: Enables improved throughput by hiding row access and precharge operations within internal banks.
• Flexible timing and burst options: Programmable CAS latency and multiple burst length/sequence settings allow tuning for system timing and bandwidth needs.
• Industrial temperature support: Specified operation from ‑40°C to +85°C for deployment in temperature‑sensitive environments.
• Standard TSOP‑II packaging: 86‑pin TSOP‑II package provides a compact footprint compatible with parallel SDRAM board designs.
• Single 3.3 V supply: Simplifies power rail requirements for systems already using 3.3 V memory domains.
• Comprehensive refresh modes: Auto and self‑refresh support with documented refresh cycle timing for multiple grade options.

Why Choose IS42S32200E-7TLI-TR?

The IS42S32200E-7TLI-TR combines a 64‑Mbit SDRAM density with a synchronous, pipelined quad‑bank architecture and flexible burst control to deliver predictable, high‑speed parallel memory for a range of embedded and industrial designs. With 143 MHz timing grade, programmable CAS latency, and LVTTL interface compatibility, it fits systems that need deterministic SDRAM behavior on a single 3.3 V rail.

Manufactured by Integrated Silicon Solution, Inc., this device is intended for designers seeking a robust SDRAM component in an 86‑TSOP II package and specified for operation across industrial temperatures. Its timing, refresh, and burst capabilities provide configurability for diverse memory throughput requirements.

Request a quote or submit an inquiry to obtain pricing, availability, and integration support for the IS42S32200E-7TLI-TR.