IS42S32200E-7BLI-TR

The IS42S32200E-7BLI-TR is a 64‑Mbit synchronous DRAM (SDRAM) device organized as 2M × 32 with a 4‑bank architecture and fully synchronous, pipeline operation. It is designed for 3.3V memory systems and implements programmable burst and CAS functionality for flexible data transfer patterns.

This device targets board‑level memory subsystems and systems that require a compact 90‑TFBGA package, parallel memory interface, and operation across a wide ambient temperature range of −40°C to +85°C.

Key Features

• Memory Architecture  64 Mbit SDRAM organized as 2,048K × 32 with 4 internal banks for improved throughput and hidden row access/precharge.
• Performance  Clock frequency option at 143 MHz (‑7 speed grade) with access time from clock of 5.5 ns (CAS‑latency = 3).
• Programmable Burst and CAS  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); programmable CAS latency of 2 or 3 clocks.
• Interface  Fully synchronous operation with LVTTL signaling and a parallel memory interface supporting random column access every clock cycle.
• Power  Single 3.3V supply operation with specified voltage range 3.0V to 3.6V.
• Refresh and Low‑Power Modes  Includes auto‑refresh and self‑refresh modes with refresh cycle options (e.g., 4,096 cycles per 16 ms for A2 grade or per 64 ms for other grades as specified).
• Package and Mounting  90‑ball TF‑BGA package (8 × 13) optimized for board‑level mounting where compact footprint is required.
• Operating Temperature  Specified ambient operating range −40°C to +85°C (TA).

Typical Applications

• Embedded memory subsystems: Provides 64‑Mbit synchronous DRAM in a compact 90‑TFBGA for board designs that require parallel SDRAM.
• High‑speed buffering and burst transfers: 143 MHz clock option and programmable burst lengths support high‑throughput burst read/write operations.
• Industrial temperature systems: −40°C to +85°C operating range accommodates environments requiring extended temperature performance.

Unique Advantages

• Quad‑bank architecture: Internal bank structure hides row access/precharge to improve effective throughput for interleaved and random accesses.
• Flexible timing control: Programmable CAS latency and burst options enable tuning for system timing and throughput requirements.
• Single 3.3V operation: Compatible with standard 3.3V memory subsystems and supports 3.0–3.6V supply tolerance.
• Compact BGA footprint: 90‑TFBGA (8×13) package reduces PCB area while providing ball‑grid mounting for higher‑density designs.
• Synchronous LVTTL interface: All signals referenced to the rising clock edge for deterministic timing and pipeline operation.

Why Choose IS42S32200E-7BLI-TR?

The IS42S32200E-7BLI-TR combines a 64‑Mbit synchronous DRAM organization, quad‑bank pipeline architecture, and programmable timing features to deliver configurable, high‑speed memory for board‑level designs. Its single 3.3V supply, LVTTL interface, and compact 90‑TFBGA package make it suitable for systems that require a small footprint and deterministic synchronous operation.

Specified for operation from −40°C to +85°C and documented by Integrated Silicon Solution, Inc., this device is appropriate for designs that need predictable SDRAM behavior, selectable burst modes, and programmable CAS latency to match system timing and throughput requirements.

Request a quote or submit a parts inquiry for the IS42S32200E-7BLI-TR to obtain pricing and availability details for your design.