IS42S32200E-7TL-TR

IC DRAM 64MBIT PAR 86TSOP II
Part Description

IC DRAM 64MBIT PAR 86TSOP II

Quantity 909 Available (as of May 4, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package86-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.5 nsGradeCommercial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging86-TFSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization2M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS42S32200E-7TL-TR – IC DRAM 64MBIT PAR 86TSOP II

The IS42S32200E-7TL-TR is a 64 Mbit synchronous DRAM (SDRAM) device from ISSI, organized as 2M × 32 with four internal banks for improved throughput. Designed for 3.3 V memory systems and a parallel LVTTL interface, this part targets applications that require synchronous, high-speed volatile storage with programmable burst and latency options within a commercial 0°C to +70°C operating temperature range.

Key Features

  • Memory Architecture 64 Mbit organized as 524,288 × 32 × 4 banks (each bank 16,777,216 bits), internally arranged as 2,048 rows × 256 columns × 32 bits for efficient row/column access.
  • Synchronous SDRAM Core Fully synchronous operation with all signals referenced to the rising clock edge and pipeline architecture for high-speed data transfer.
  • Performance Options Available speed grades include clock frequencies up to 200/166/143/133 MHz; the -7 grade operates at 143 MHz with a typical access time from clock of 5.5 ns (CAS latency = 3).
  • Programmability Programmable burst length (1, 2, 4, 8, full page) and burst sequence (sequential/interleave), plus programmable CAS latency (2 or 3 clocks) to match system timing requirements.
  • Refresh and Self-Refresh Supports AUTO REFRESH and self-refresh modes. Refresh requirement: 4096 refresh cycles per 16 ms (A2 grade) or per 64 ms for commercial/industrial/A1 grades (commercial grade applies to this device).
  • Interface and Logic LVTTL-compatible I/O with parallel memory interface enabling random column access every clock cycle and burst read/write operations with burst termination commands.
  • Power Single-supply operation specified at 3.0 V to 3.6 V (standard 3.3 V systems).
  • Package & Thermal 86-pin TSOP-II (86-TFSOP) package with 10.16 mm width; commercial operating ambient temperature 0°C to +70°C (TA).

Typical Applications

  • High-speed buffer memory systems Suitable for designs that require synchronous, low-latency volatile storage and burst data transfers using a parallel interface.
  • Embedded systems with 3.3 V supplies Fits systems operating from 3.0 V to 3.6 V that need configurable burst length and CAS latency to match timing constraints.
  • Systems requiring predictable refresh behavior Commercial-grade refresh timing (4096 cycles every 64 ms) and self-refresh modes simplify system memory management.

Unique Advantages

  • Configurable performance: Multiple speed grades and selectable CAS latency let designers tune latency and throughput to match system timing requirements.
  • Burst-capable transfers: Programmable burst lengths and sequences enable efficient block data movement and reduce controller overhead in burst-heavy workloads.
  • Synchronous pipeline architecture: All signals referenced to the clock rising edge and internal bank architecture enable predictable timing and improved effective throughput.
  • Standard 3.3 V operation: Single-supply 3.0 V–3.6 V range supports common 3.3 V memory system rails for easy integration.
  • Commercial thermal rating: Specified for 0°C to +70°C operation for designs targeting commercial-temperature deployments.
  • Compact TSOP-II package: 86-pin TSOP-II footprint provides a space-efficient option for board-level memory implementations.

Why Choose IC DRAM 64MBIT PAR 86TSOP II?

The IS42S32200E-7TL-TR offers a practical combination of synchronous DRAM features—programmable burst behavior, selectable CAS latency, and a quad-bank architecture—delivered in a compact 86-pin TSOP-II package for commercial 3.3 V systems. Its configurable performance and standard interface make it suitable for designs that need predictable, high-speed volatile memory with flexible timing options.

This device is appropriate for engineers and procurement teams specifying commercial-temperature SDRAM for embedded and system-level designs where single-supply operation, burst modes, and LVTTL-compatible parallel access are required. The device’s documented timing parameters and refresh behavior support straightforward integration and system-level memory management.

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