IS42S32200E-6TLI

The IS42S32200E-6TLI is a 64 Mbit synchronous DRAM (SDRAM) device organized as 2M × 32 with four internal banks and a parallel memory interface. It implements a fully synchronous, pipelined architecture and supports programmable burst lengths and CAS latency for flexible data transfer timing.

Designed for use in commercial and industrial 3.3V memory systems, the device targets applications that require high-speed system memory and buffering at clock rates up to 166 MHz while supporting operating temperatures from −40°C to +85°C.

Key Features

• Core & Architecture  Quad-bank SDRAM organized as 2M × 32 (4 banks, each 16,777,216 bits) to improve access concurrency and throughput.
• Memory Capacity  64 Mbit total capacity organized for parallel access in a 32-bit wide data path.
• Performance & Timing  Rated for a clock frequency option of 166 MHz (part suffix -6); programmable CAS latency of 2 or 3 clocks with access time from clock of 5.5 ns for CL=3 at the -6 speed grade.
• Burst & Sequencing  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) for flexible transfer patterns.
• Interface  Fully synchronous interface with LVTTL-compatible I/O and support for random column address every clock cycle.
• Power  Single-supply operation from 3.0 V to 3.6 V.
• Refresh & Self-Refresh  Auto-refresh and self-refresh modes supported; refresh intervals per datasheet options (e.g., 4096 cycles/16 ms for A2 grade or 64 ms for other grades as specified).
• Package & Temperature  Available in an 86-pin TSOP-II package (10.16 mm width) and specified operating temperature range of −40°C to +85°C (TA).
• Architecture Details  Pipeline architecture and internal bank management for hiding row access/precharge and supporting burst read/write operations with burst termination commands.

Typical Applications

• Embedded Systems  Serves as high-speed system memory or buffer storage for embedded processors requiring a 32-bit-wide SDRAM interface.
• Industrial Control  Suitable for industrial-grade systems operating across a wide temperature range (−40°C to +85°C) where synchronous memory is required.
• Networking and Communications  Used for packet buffering and temporary data storage in designs that leverage programmable burst transfers and random column access every clock cycle.
• Consumer and Computing Devices  Provides system memory and burst-capable buffering in commercial electronic products needing a 64 Mbit SDRAM with LVTTL signaling.

Unique Advantages

• Synchronous, pipelined architecture: Enables predictable, clock-referenced operation and high-speed data transfers using pipeline timing.
• Flexible timing configuration: Programmable CAS latency (2 or 3) and multiple burst length/sequence options allow tuning for target system timing and throughput.
• Quad-bank organization: Four internal banks (2M × 32 each) improve effective parallelism and reduce row access/precharge penalties.
• Industrial temperature support: Specified operation from −40°C to +85°C (TA) for use in temperature-challenging environments.
• Standard 3.3V supply: Single 3.0–3.6 V power supply simplifies integration into existing 3.3V memory systems.
• Compact TSOP-II package: 86-pin TSOP-II (10.16 mm width) provides a space-efficient footprint for board-level memory implementations.

Why Choose IS42S32200E-6TLI?

The IS42S32200E-6TLI offers a straightforward, fully synchronous 64 Mbit SDRAM solution with programmable timing and burst behavior suited to systems that require predictable, clock-referenced memory transfers. Its quad-bank organization and pipeline architecture support improved effective throughput for burst and random-access patterns.

This device is appropriate for designers of embedded, industrial, networking, and consumer systems that need a 32-bit parallel SDRAM at a 3.3V supply and an extended operating temperature range. The available timing options and compact TSOP-II package make it amenable to a range of board-level memory implementations where performance and integration density matter.

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