 | | IS42S32160B-75TL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,369 | |
 | | IS42S32160B-75TL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 191 | |
 | | IS42S32160B-75TLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 883 | |
 | | IS42S32160B-75TLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 188 | |
 | | IS42S32160B-7BL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90LFBGA | Memory | 90-LFBGA (13x11) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 109 | |
 | | IS42S32160B-7BL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90LFBGA | Memory | 90-LFBGA (13x11) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 603 | |
 | | IS42S32160B-7BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90LFBGA | Memory | 90-LFBGA (13x11) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 1,228 | |
 | | IS42S32160B-7BLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90LFBGA | Memory | 90-LFBGA (13x11) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 192 | |
 | | IS42S32160B-7TL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,286 | |
 | | IS42S32160B-7TL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 222 | |
 | | IS42S32160B-7TLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 904 | |
 | | IS42S32160B-7TLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,530 | |
 | | IS42S32160C-6BI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90WBGA | Memory | 90-WBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 120 | |
 | | IS42S32160C-6BI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90WBGA | Memory | 90-WBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 525 | |
 | | IS42S32160C-6BL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90WBGA | Memory | 90-WBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 864 | |
 | | IS42S32160C-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90WBGA | Memory | 90-WBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 962 | |
 | | IS42S32160C-6BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90WBGA | Memory | 90-WBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 218 | |
 | | IS42S32160C-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90WBGA | Memory | 90-WBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 1,223 | |
 | | IS42S32160C-75BL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90WBGA | Memory | 90-WBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 695 | |
 | | IS42S32160C-75BL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90WBGA | Memory | 90-WBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 275 | |