 | | IS42S16160D-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TW-BGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 754 | |
 | | IS42S16160D-6BLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TW-BGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 381 | |
 | | IS42S16160D-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TW-BGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 1,870 | |
 | | IS42S16160D-6TL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 871 | |
 | | IS42S16160D-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,393 | |
 | | IS42S16160D-6TLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,425 | |
 | | IS42S16160D-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,398 | |
 | | IS42S16160D-75EBL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TW-BGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 128 | |
 | | IS42S16160D-75EBL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TW-BGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 575 | |
 | | IS42S16160D-75EBLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TW-BGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 98 | |
 | | IS42S16160D-75EBLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TW-BGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 1,207 | |
 | | IS42S16160D-75ETL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,533 | |
 | | IS42S16160D-75ETL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 66 | |
 | | IS42S16160D-75ETLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 495 | |
 | | IS42S16160D-75ETLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 213 | |
 | | IS42S16160D-7B | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TW-BGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 334 | |
 | | IS42S16160D-7BI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TW-BGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 609 | |
 | | IS42S16160D-7BL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TW-BGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 213 | |
 | | IS42S16160D-7BL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TW-BGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 115 | |
 | | IS42S16160D-7BLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TW-BGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 1,366 | |