 | N/A | IS42S16800J-7BLI-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 1,045 | |
 | N/A | IS42S16800J-7TL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 309 | |
 | N/A | IS42S16800J-7TL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 149 | |
 | N/A | IS42S16800J-7TLI | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,511 | |
 | N/A | IS42S16800J-7TLI-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 113 | |
 | | IS42S32160A-75B | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90LFBGA | Memory | 90-LFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 672 | |
 | | IS42S32160A-75B-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90LFBGA | Memory | 90-LFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 1,660 | |
 | | IS42S32160A-75BI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90LFBGA | Memory | 90-LFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 1,621 | |
 | | IS42S32160A-75BL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90LFBGA | Memory | 90-LFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 892 | |
 | | IS42S32160A-75BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90LFBGA | Memory | 90-LFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 1,003 | |
 | | IS42S32160A-75BLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90LFBGA | Memory | 90-LFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 215 | |
 | | IS42S32160B-6BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90WBGA | Memory | 90-WBGA (11x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 606 | |
 | | IS42S32160B-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90WBGA | Memory | 90-WBGA (11x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 790 | |
 | | IS42S32160B-6TLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,081 | |
 | | IS42S32160B-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,886 | |
 | | IS42S32160B-75BL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90LFBGA | Memory | 90-LFBGA (13x11) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 285 | |
 | | IS42S32160B-75EBLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90WBGA | Memory | 90-WBGA (11x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 603 | |
 | | IS42S32160B-75EBLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90WBGA | Memory | 90-WBGA (11x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 280 | |
 | | IS42S32160B-75ETLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 318 | |
 | | IS42S32160B-75ETLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 659 | |