 | | W25N512GVEIR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (8x6) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 898 | |
 | | W25N512GVEIR TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (8x6) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 989 | |
 | | W25N512GVEIT | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (8x6) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 683 | |
 | | W25N512GVEIT TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (8x6) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 756 | |
 | | W25N512GVFIG | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 16SOIC | Flash Memory | 16-SOIC | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,828 | |
 | | W25N512GVFIG TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 16SOIC | Flash Memory | 16-SOIC | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,802 | |
 | | W25N512GVFIR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 16SOIC | Flash Memory | 16-SOIC | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 668 | |
 | | W25N512GVFIR TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 16SOIC | Flash Memory | 16-SOIC | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,027 | |
 | | W25N512GVFIT | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 16SOIC | Flash Memory | 16-SOIC | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,101 | |
 | | W25N512GVFIT TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 16SOIC | Flash Memory | 16-SOIC | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,101 | |
 | | W25N512GVPIG | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (6x5) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,077 | |
 | | W25N512GVPIG TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (6x5) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 643 | |
 | | W25N512GVPIR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (6x5) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 308 | |
 | | W25N512GVPIR TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (6x5) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,567 | |
 | | W25N512GVPIT | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (6x5) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 754 | |
 | | W25N512GVPIT TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (6x5) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 617 | |
 | | W25N512GWBIR | Winbond Electronics | IC FLASH 512MBIT SPI 24TFBGA | Flash Memory | 24-TFBGA (6x8) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,754 | |
 | | W25N512GWBIR TR | Winbond Electronics | IC FLASH 512MBIT SPI 24TFBGA | Flash Memory | 24-TFBGA (6x8) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 700 | |
 | | W25N512GWBIT TR | Winbond Electronics | IC FLASH 512MBIT SPI 24TFBGA | Flash Memory | 24-TFBGA (6x8) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 339 | |
 | | W25N512GWEIR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (8x6) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,574 | |