 | | AS4C4M16SA-7BCN | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 712 | |
 | | AS4C4M16SA-7BCNTR | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 190 | |
 | | AS4C4M16SA-7TCN | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 96 | |
 | | AS4C4M16SA-7TCNTR | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 291 | |
 | | AS4C4M16SB-6TIN | Alliance Memory, Inc. | IC DRAM 64MBIT LVTTL 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 728 | |
 | | AS4C4M16SB-6TINTR | Alliance Memory, Inc. | IC DRAM 64MBIT LVTTL 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 4 | |
 | N/A | AS4C4M32D1-5BCN | Alliance Memory, Inc. | IC DRAM 128MBIT PARALLEL 144BGA | Memory | 144-LFBGA (12x12) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 12 ns | 1,158 | |
 | N/A | AS4C4M32D1-5BIN | Alliance Memory, Inc. | IC DRAM 128MBIT PARALLEL 144BGA | Memory | 144-LFBGA (12x12) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 12 ns | 983 | |
 | | AS4C4M32D1A-5BCN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 144LFBGA | Memory | 144-LFBGA (12x12) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 12 ns | 297 | |
 | | AS4C4M32D1A-5BCNTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 144LFBGA | Memory | 144-LFBGA (12x12) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 12 ns | 606 | |
 | | AS4C4M32D1A-5BIN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 144LFBGA | Memory | 144-LFBGA (12x12) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 12 ns | 1,011 | |
 | | AS4C4M32D1A-5BINTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 144LFBGA | Memory | 144-LFBGA (12x12) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 12 ns | 1,045 | |
 | | AS4C4M32S-6BCN | Alliance Memory, Inc. | IC DRAM 128MBIT LVTTL 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 1,246 | |
 | | AS4C4M32S-6BCNTR | Alliance Memory, Inc. | IC DRAM 128MBIT LVTTL 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 1,163 | |
 | | AS4C4M32S-6BIN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 2 ns | 1,253 | |
 | | AS4C4M32S-6BINTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 2 ns | 665 | |
 | | AS4C4M32S-6TCN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 14 | |
 | | AS4C4M32S-6TCNTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 876 | |
 | | AS4C4M32S-6TIN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 1,266 | |
 | | AS4C4M32S-6TINTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 327 | |