AS4C4M32S-6TIN

The AS4C4M32S-6TIN is a 128 Mbit synchronous DRAM (SDRAM) organized as 4M × 32 with a parallel LVTTL interface and quad-bank architecture. It provides fully synchronous operation with internal pipelined architecture and programmable modes for burst length, CAS latency and burst type.

Designed for systems that require high memory bandwidth and predictable timing, this device supports industrial temperature operation and is supplied in an 86-pin TSOP II package for compact board-level integration.

Key Features

• Memory Architecture  Internal configuration as four 1M × 32-bit banks (total 128 Mbit) with burst-oriented read/write accesses.
• Performance  166 MHz clock frequency (part -6) with maximum access time from CLK of 5.5 ns and clock cycle times corresponding to 6/7 ns variants.
• Burst and Mode Flexibility  Programmable burst lengths of 1, 2, 4, 8 or full page; burst types sequential and interleave; CAS latency selectable at 2 or 3.
• Interface and Control  Parallel LVTTL interface with individual byte masking via DQM0–DQM3 and support for burst-read/single-write and burst stop functions.
• Refresh and Power  Auto Refresh and Self Refresh supported with 4096 refresh cycles per 64 ms; single 3.3 V nominal supply with specified supply range 3.0 V–3.6 V.
• Package and Temperature  86-pin TSOP II (400 mil / 10.16 mm width) package; industrial operating temperature range −40 °C to 85 °C.

Typical Applications

• High-bandwidth embedded systems  Use where sustained burst transfers and programmable burst lengths optimize data throughput.
• Parallel memory interface designs  Suited for systems that require a parallel LVTTL SDRAM interface and byte-level data masking.
• Industrial electronics  Extended −40 °C to 85 °C operating range supports applications requiring industrial temperature performance.

Unique Advantages

• High throughput parallel interface: Parallel LVTTL interface at 166 MHz enables predictable, synchronous data transfers for burst-oriented access patterns.
• Flexible burst and timing control: Programmable burst lengths, burst types and CAS latency allow tuning to match system bandwidth and latency requirements.
• Compact, industry-standard package: 86-pin TSOP II (400 mil) provides a space-efficient footprint for board-level integration.
• Industrial temperature capability: Rated for −40 °C to 85 °C for deployments in temperature-challenging environments.
• Power and refresh management: Single 3.3 V nominal supply (specified 3.0 V–3.6 V) with Auto and Self Refresh modes and 4096 refresh cycles/64 ms for data retention control.

Why Choose AS4C4M32S-6TIN?

The AS4C4M32S-6TIN delivers a compact, programmable SDRAM solution optimized for applications that require synchronous, burst-oriented memory with predictable timing. Its 4M × 32 organization, selectable CAS latency and burst options provide design flexibility to balance latency and throughput.

With industrial temperature support and a standard 86-pin TSOP II package, this device is appropriate for embedded and industrial designs where board space, extended temperature range and parallel LVTTL interfacing are key considerations.

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