AS4C4M32S-6TINTR

The AS4C4M32S-6TINTR is a 128-megabit synchronous dynamic RAM (SDRAM) organized as 4M x 32. This high-density memory device operates from a single 3.3V power supply and features a 166MHz clock frequency with 5.5ns access time. Built on proven SDRAM technology, it delivers reliable parallel memory expansion for systems requiring substantial data buffering and processing capabilities.

Key Features

• High-Density Memory Array - 128Mbit capacity organized as 4 million words by 32 bits provides efficient data storage for memory-intensive applications.
• Fast Operation - 166MHz clock frequency and 5.5ns access time enable rapid data transfer for time-critical operations.
• Standard 3.3V Operation - Single 3.3V supply voltage (3V to 3.6V range) simplifies power distribution and reduces system complexity.
• Parallel Interface - Direct parallel memory interface enables straightforward integration with existing system architectures.
• Industrial Temperature Range - -40°C to 85°C operating range supports deployment in harsh industrial and automotive environments.
• Compact 86-TSOP II Package - 86-pin TSOP II package with 10.16mm width offers space-efficient PCB layout.

Typical Applications

• Industrial Control Systems - This SDRAM provides reliable memory buffering for PLCs, motion controllers, and industrial automation systems where extended temperature tolerance ensures consistent operation in factory floor environments.
• Networking Equipment - The high-bandwidth parallel interface and ample memory capacity make this device suitable for routers, switches, and network appliances that require fast packet buffering.
• Medical Instrumentation - Medical imaging systems and diagnostic equipment benefit from the device's ability to temporarily store large datasets during processing and analysis operations.
• Test and Measurement - High-speed data acquisition systems use this SDRAM to capture and buffer signals before processing, with the 166MHz clock supporting rapid sampling rates.
• Legacy System Upgrades - Provides drop-in memory expansion for existing parallel-bus architectures requiring higher density than older DRAM technologies.

Unique Advantages

• Proven SDRAM Architecture: Mature synchronous DRAM technology delivers predictable timing and well-understood integration characteristics.
• Wide Operating Voltage Tolerance: 3V to 3.6V supply range accommodates voltage variations in industrial power systems.
• Extended Temperature Support: -40°C to 85°C range eliminates the need for additional thermal management in many industrial deployments.
• Standard Parallel Interface: Simplifies migration from older memory technologies without requiring protocol conversion or interface logic.
• Single Voltage Operation: Eliminates multiple power rail requirements, reducing BOM cost and board complexity.
• Fast Write Cycles: 2ns write cycle time supports high-throughput data logging and buffering applications.

Why Choose AS4C4M32S-6TINTR?

The AS4C4M32S-6TINTR represents a practical solution for designs requiring parallel SDRAM with industrial temperature capability. Its combination of 128Mbit density, 166MHz operation, and extended temperature range addresses common requirements in industrial control, networking, and instrumentation applications. The standard TSOP II package and single 3.3V supply simplify board design and manufacturing.

This device is particularly well-suited for legacy system maintenance, production line equipment upgrades, and new designs targeting industrial environments where proven parallel memory technology is preferred over newer serial interfaces.

Contact Us for Pricing and Availability

Request a quote for the AS4C4M32S-6TINTR or contact our technical sales team to discuss volume pricing, lead times, and application support for your project requirements.