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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | AS4C32M8D1-5TCNTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,086 | ||
 | AS4C32M8D1-5TIN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 396 | ||
 | AS4C32M8D1-5TINTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 926 | ||
 | AS4C32M8SA-6TIN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 360 | ||
 | AS4C32M8SA-6TINTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 571 | ||
 | AS4C32M8SA-7TCN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.5 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 240 | ||
 | AS4C32M8SA-7TCNTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.5 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 8 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,300 | ||
 | AS4C4G8D4-62BCN | Alliance Memory, Inc. | DDR4, 32GB, 4G X 8, 1.2V, 78-BAL | Memory | 78-FBGA (7.5x11) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Access Time: 13.75 ns Clock Frequency: 1.6 GHz Grade: Extended / Automotive-like Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4G x 8 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 78-TFBGA Qualification: N/A Technology: SDRAM - DDR4 Write Cycle Time Word Page: N/A | 345 | ||
 | AS4C4G8D4-62BCNTR | Alliance Memory, Inc. | DDR4, 32GB, 4G X 8, 1.2V, 78-BAL | Memory | 78-FBGA (7.5x11) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Access Time: 13.75 ns Clock Frequency: 1.6 GHz Grade: Extended / Automotive-like Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4G x 8 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 78-TFBGA Qualification: N/A Technology: SDRAM - DDR4 Write Cycle Time Word Page: N/A | 71 | ||
 | AS4C4M16D1-5TCN | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 16 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: N/A | 127 | ||
 | AS4C4M16D1-5TCNTR | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 16 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: N/A | 463 | ||
 | AS4C4M16D1-5TIN | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 16 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: N/A | 1,107 | ||
 | AS4C4M16D1-5TINTR | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 16 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: N/A | 226 | ||
 | AS4C4M16D1A-5TANTR | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 16 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: AEC-Q100 Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 214 | ||
 | AS4C4M16D1A-5TCN | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 16 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: N/A | 1,632 | ||
 | AS4C4M16D1A-5TCNTR | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 16 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: N/A | 46 | ||
 | AS4C4M16D1A-5TIN | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 16 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: N/A | 699 | ||
 | AS4C4M16D1A-5TINTR | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 16 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: N/A | 168 | ||
 | AS4C4M16S-6BIN | Alliance Memory, Inc. | IC DRAM 64MBIT PARALLEL 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 16 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 118 | ||
 | AS4C4M16S-6BINTR | Alliance Memory, Inc. | IC DRAM 64MBIT PARALLEL 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 4M x 16 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,032 |
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