AS4C4M16S-6BIN

The AS4C4M16S-6BIN from Alliance Memory is a 64-megabit synchronous DRAM organized as 4M x 16 bits. This parallel interface SDRAM operates at a 166MHz clock frequency with 5.4ns access time, delivering reliable memory performance for embedded systems and industrial applications. Built on proven SDRAM technology with a 3V to 3.6V supply voltage, this device provides a balance of capacity, speed, and power efficiency in a compact 54-pin TFBGA package.

Key Features

• Memory Architecture - 64Mbit capacity configured as 4M x 16-bit organization provides flexible addressing for diverse system requirements.
• Performance Specifications - 166MHz clock frequency and 5.4ns access time enable responsive data transfers for time-sensitive applications.
• Power Supply - 3V to 3.6V operating voltage aligns with standard embedded system power rails and supports low-power design objectives.
• Package Format - 54-pin TFBGA measuring 8mm x 8mm delivers high pin density while minimizing board space requirements.
• Temperature Range - Industrial temperature rating of -40°C to 85°C ensures operation across demanding environmental conditions.
• Interface Type - Parallel memory interface provides straightforward integration with microcontrollers, processors, and system controllers.

Typical Applications

• Industrial Control Systems - This SDRAM serves as working memory in PLCs, industrial PCs, and HMI terminals where the extended temperature range ensures reliable operation in factory floor environments.
• Embedded Computing Platforms - The parallel interface and standard SDRAM protocol simplify integration with embedded processors requiring fast external memory for program execution and data buffering.
• Telecommunications Equipment - Network routers, switches, and communication modules utilize this memory for packet buffering and configuration storage where the 64Mbit capacity suits moderate throughput requirements.
• Test and Measurement Instruments - Laboratory equipment and data acquisition systems benefit from the deterministic access times and industrial temperature tolerance for consistent performance in varied testing environments.

Unique Advantages

• Proven SDRAM Technology: Well-established synchronous DRAM architecture reduces integration risk and leverages mature controller support in common embedded platforms.
• Industrial Temperature Capability: -40°C to 85°C operational range eliminates the need for additional thermal management in most industrial installations.
• Compact TFBGA Footprint: 8mm x 8mm package size reduces PCB real estate requirements compared to larger TSOP or SOIC memory packages.
• Standard Supply Voltage: 3V to 3.6V operation matches common embedded system power architectures without requiring dedicated voltage regulators.
• Moderate Density Option: 64Mbit capacity provides sufficient memory for many embedded applications while avoiding over-specification and associated cost.

Why Choose AS4C4M16S-6BIN?

The AS4C4M16S-6BIN offers a practical memory solution for embedded and industrial designs requiring proven SDRAM technology with industrial temperature capability. Its 4M x 16 organization, parallel interface, and compact TFBGA package make it suitable for space-constrained applications where moderate memory capacity meets system requirements. The 166MHz operation and 5.4ns access time provide adequate performance for real-time control, communication buffering, and data processing tasks.

This device is well-suited for designs prioritizing reliable SDRAM operation across industrial temperature extremes, straightforward parallel interfacing, and efficient board space utilization. The standard 3.3V supply voltage and proven synchronous DRAM architecture simplify power delivery and controller design.

Request a Quote

Contact our sales team to discuss your memory requirements and receive pricing for the AS4C4M16S-6BIN. Our technical support staff can assist with integration guidance, reference designs, and volume availability to support your project timeline.