AS4C4M16D1A-5TINTR

IC DRAM 64MBIT PAR 66TSOP II
Part Description

IC DRAM 64MBIT PAR 66TSOP II

Quantity 361 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerAlliance Memory, Inc.
Manufacturing StatusActive
Manufacturer Standard Lead Time16 Weeks
Datasheet

Specifications & Environmental

Device Package66-TSOP IIMemory FormatDRAMTechnologySDRAM - DDR
Memory Size64 MbitAccess Time700 psGradeIndustrial
Clock Frequency200 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging66-TSSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B2AHTS Code8542.32.0002

Overview of AS4C4M16D1A-5TINTR - 64Mbit DDR SDRAM

The AS4C4M16D1A-5TINTR from Alliance Memory is a 64-megabit DDR SDRAM organized as 4M x 16, designed for embedded systems requiring reliable parallel memory with industrial-grade temperature tolerance. This volatile memory device operates at 200MHz clock frequency with a 7ns access time, making it suitable for data buffering, temporary storage, and real-time processing applications where fast read/write cycles are essential.

Built on DDR SDRAM technology in a compact 66-pin TSOP II package, this device provides a proven memory solution for designs that need to balance performance, power consumption, and cost. With an extended operating temperature range of -40°C to 85°C, it is engineered to maintain data integrity in challenging industrial and commercial environments.

Key Features

  • Memory Core - 64-megabit DDR SDRAM architecture organized as 4M x 16, providing efficient word-wide access for parallel data operations and reducing the need for complex memory management.
  • Performance - 200MHz clock frequency with 7ns access time enables rapid data transfers for applications requiring quick response times and high throughput.
  • Power Requirements - Operates on a standard 2.3V to 2.7V supply voltage, compatible with common embedded system power rails and helping to minimize overall power consumption.
  • Interface - Parallel memory interface simplifies integration with microcontrollers, DSPs, and FPGAs that support traditional parallel memory architectures.
  • Package - 66-pin TSOP II (10.16mm width) footprint offers a space-efficient surface-mount solution for PCB layouts with area constraints.
  • Temperature Range - Extended industrial operating temperature range of -40°C to 85°C ensures reliable performance across varied environmental conditions.

Typical Applications

  • Industrial Controllers - This DDR SDRAM serves as working memory in PLCs, motion controllers, and industrial automation systems where the extended temperature range ensures stable operation in factory floor environments subject to temperature fluctuations.
  • Embedded Computing - Provides data buffering and temporary storage for single-board computers, embedded processors, and edge computing devices that require fast volatile memory for runtime operations and intermediate data processing.
  • Communication Equipment - Functions as packet buffer memory in networking hardware, routers, and telecommunications infrastructure where rapid data throughput supports the handling of real-time data streams.
  • Test and Measurement Instruments - Supplies high-speed temporary storage for oscilloscopes, data acquisition systems, and analytical equipment that capture and process transient signals requiring immediate memory access.
  • Consumer Electronics - Offers system memory for set-top boxes, digital displays, and multimedia devices where cost-effective volatile storage supports program execution and data caching.

Unique Advantages

  • Industrial Temperature Tolerance: The -40°C to 85°C operating range allows deployment in environments where standard commercial memory components may experience reliability issues, reducing field failures and warranty costs.
  • Proven DDR Technology: Leveraging mature DDR SDRAM architecture provides a cost-effective memory solution with well-established driver support and design resources, accelerating time to market.
  • Flexible Memory Organization: The 4M x 16 organization aligns with 16-bit data bus architectures common in embedded systems, simplifying address decoding and reducing glue logic requirements.
  • Standard Footprint: The 66-pin TSOP II package is a widely adopted form factor, enabling straightforward board layout and providing compatibility with existing PCB designs and second-source options.
  • Active Lifecycle Status: With an active production status, this component offers long-term availability for designs requiring predictable supply and reduced obsolescence risk.
  • Low-Voltage Operation: Operating on 2.3V to 2.7V reduces power dissipation compared to older memory technologies, contributing to lower system thermal management requirements and extended battery life in portable applications.

Why Choose AS4C4M16D1A-5TINTR?

This DDR SDRAM is positioned for embedded system designers who need a dependable, cost-effective memory solution with industrial-grade temperature performance. Its combination of 200MHz operation, parallel interface compatibility, and extended temperature range makes it particularly well-suited for industrial control, embedded computing, and communication applications where reliability and proven technology are priorities.

For long-term designs requiring stable supply and established memory technology, the AS4C4M16D1A-5TINTR provides a balanced solution that minimizes risk while delivering the performance characteristics needed for real-time embedded applications. Its active lifecycle status and standard packaging support predictable procurement and design longevity.

Get a Quote

Contact our sales team to discuss your specific memory requirements, volume pricing, and delivery timelines for the AS4C4M16D1A-5TINTR. We can provide technical support to help you integrate this DDR SDRAM into your design and ensure it meets your application needs.

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