AS4C32M8D1-5TIN
| Part Description |
IC DRAM 256MBIT PAR 66TSOP II |
|---|---|
| Quantity | 681 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Alliance Memory, Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP II | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 700 ps | Grade | Industrial | ||
| Clock Frequency | 200 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of AS4C32M8D1-5TIN - 256Mb DDR SDRAM
The AS4C32M8D1-5TIN is a 256-megabit DDR SDRAM memory device from Alliance Memory, Inc. organized as 32M x 8. This parallel interface DRAM operates at 200 MHz clock frequency with 7ns access time, delivering reliable volatile memory storage for systems requiring fast data access and moderate density. With its 2.3V to 2.7V supply voltage, this device offers compatibility with standard DDR memory subsystems while supporting extended industrial temperature operation from -40°C to 85°C.
Key Features
- Memory Architecture - 256Mb capacity organized as 32M x 8, providing flexible data path integration for embedded systems and industrial controllers.
- DDR SDRAM Technology - Volatile DDR SDRAM core with 200 MHz clock frequency and 7ns access time enables rapid data throughput for time-sensitive applications.
- Operating Voltage - 2.3V to 2.7V supply voltage range supports standard DDR power rails while maintaining low power consumption.
- Extended Temperature Range - Industrial-grade -40°C to 85°C ambient temperature rating ensures reliable operation in harsh environmental conditions.
- Parallel Interface - Traditional parallel memory interface simplifies integration with legacy system architectures and microcontroller designs.
- Package Format - Available in 66-TSOP II (0.400", 10.16mm width) package, offering compact footprint for space-constrained board designs.
Typical Applications
- Industrial Automation - This DDR SDRAM provides working memory for PLCs, motion controllers, and HMI systems where extended temperature tolerance ensures consistent operation in factory floor environments and the parallel interface simplifies integration with industrial microcontrollers.
- Embedded Computing Systems - The 256Mb density serves as main memory for embedded processors in medical devices, measurement equipment, and control systems where moderate capacity and proven DDR technology reduce design risk.
- Communications Infrastructure - Network switches, routers, and telecommunications equipment leverage this memory for packet buffering and routing table storage where the 200 MHz clock frequency supports data throughput requirements.
- Test and Measurement Equipment - Oscilloscopes, data loggers, and analytical instruments use this DRAM for waveform capture and data storage where fast access times enable real-time measurement processing.
- Legacy System Upgrades - Replacement memory for existing industrial and embedded designs originally deployed with DDR SDRAM, maintaining compatibility and extending product lifecycles.
Unique Advantages
- Extended Temperature Operation: The -40°C to 85°C rating eliminates the need for thermal management in many industrial environments, reducing BOM cost and improving system reliability.
- Proven DDR Technology: Mature SDRAM architecture with well-established design practices accelerates development cycles and minimizes integration risks compared to newer memory technologies.
- Parallel Interface Simplicity: Direct memory bus connection enables straightforward integration with microcontrollers and processors supporting parallel memory, avoiding the complexity of serial protocols.
- Standard Voltage Compatibility: The 2.3V to 2.7V supply voltage aligns with common DDR power rails, simplifying power supply design and enabling use of standard voltage regulators.
- Compact TSOP II Packaging: The 66-pin TSOP II form factor provides high pin density in a proven surface-mount package that balances board space efficiency with manufacturability.
- 15ns Write Cycle Time: Fast write performance supports applications with frequent memory updates, such as data acquisition and real-time control systems.
Why Choose AS4C32M8D1-5TIN?
The AS4C32M8D1-5TIN is positioned for industrial and embedded applications where proven DDR SDRAM technology, extended temperature operation, and parallel interface compatibility are critical design requirements. This device is ideal for systems with moderate memory capacity needs that prioritize reliability and straightforward integration over cutting-edge density or performance. Engineers designing for long product lifecycles in industrial automation, test equipment, or embedded computing will value the mature technology platform and industrial temperature rating.
For legacy system maintenance and upgrade projects, this DDR SDRAM offers a path to sustain existing designs while maintaining compatibility with established memory subsystems.
Request a Quote
Contact our technical sales team to discuss your memory requirements and receive pricing for the AS4C32M8D1-5TIN. Our engineers can assist with integration support, temperature derating analysis, and availability planning for your production needs.
