AS4C4M16D1-5TIN
| Part Description |
IC DRAM 64MBIT PAR 66TSOP II |
|---|---|
| Quantity | 1,137 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Alliance Memory, Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP II | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 700 ps | Grade | Industrial | ||
| Clock Frequency | 200 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B2A | HTS Code | 8542.32.0002 |
Overview of AS4C4M16D1-5TIN – IC DRAM 64MBIT PAR 66TSOP II
The AS4C4M16D1-5TIN is a 64 Mbit DDR SDRAM organized as 4M × 16 with a parallel memory interface. Packaged in a 66‑TSOP II (66‑TSSOP, 0.400" / 10.16 mm width), it delivers a 200 MHz clock rate and 700 ps access time for moderate‑speed memory applications.
This device is suited to designs that require a compact, low‑voltage (2.3 V – 2.7 V) volatile DRAM solution capable of operating across an extended temperature range (‑40°C to 85°C). It is manufactured by Alliance Memory, Inc.
Key Features
- Memory Core 64 Mbit DDR SDRAM organized as 4M × 16, offering parallel data paths for straightforward memory subsystem integration.
- Performance Supports a 200 MHz clock frequency with a specified access time of 700 ps to meet timing requirements for mid‑range DDR applications.
- Voltage Operates from 2.3 V to 2.7 V, enabling use in low‑voltage system designs.
- Package Available in a 66‑TSOP II (66‑TSSOP, 0.400", 10.16 mm width) package for compact board-level mounting.
- Interface Parallel memory interface (DRAM format) compatible with parallel DDR memory subsystems.
- Operating Range Rated for ambient operation from ‑40°C to 85°C (TA) for a wide span of environmental conditions.
Typical Applications
- Parallel DDR Memory Subsystems — Used as a 64 Mbit parallel DDR memory component in systems requiring an organized 4M × 16 memory array.
- Embedded Systems — Integrates into compact embedded designs where a low‑voltage, moderate‑speed DRAM is required.
- Board‑Level Memory Expansion — Fits into designs needing a TSOP II packaged DRAM device for constrained PCB footprints.
Unique Advantages
- Compact TSOP II package: 66‑pin TSSOP footprint (0.400", 10.16 mm width) conserves PCB area while enabling through‑board assembly.
- Low‑voltage operation: 2.3 V–2.7 V supply reduces power envelope for energy‑sensitive designs.
- Deterministic performance: 200 MHz clock and 700 ps access time provide measurable timing for system budgeting.
- Parallel 4M × 16 organization: Simplifies data path design for applications expecting 16‑bit wide memory words.
- Extended temperature rating: −40°C to 85°C (TA) supports deployment in varied environmental conditions.
Why Choose AS4C4M16D1-5TIN?
The AS4C4M16D1-5TIN positions itself as a practical 64 Mbit DDR SDRAM option for designers needing a compact, low‑voltage parallel memory device with defined performance characteristics. Its 4M × 16 organization, 200 MHz clock capability, and 66‑TSOP II packaging make it suitable for embedded and board‑level memory applications where space and power are considerations.
Manufactured by Alliance Memory, Inc., this device is appropriate for designs that require predictable timing, a narrow supply range, and operation across an extended ambient temperature window, providing a straightforward memory building block for system integration.
Request a quote or contact sales to discuss availability, lead times, and pricing for the AS4C4M16D1-5TIN.
