EN25QW16A-104WIP(2P)
| Part Description |
16Mbit Wide Range (1.65-3.6V) SPI NOR Flash, VDFN/WSON 6x5mm, Industrial (-40°C to +85°C) |
|---|---|
| Quantity | 1,006 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | VDFN/WSON-8 (6x5mm) | Memory Format | FLASH | Technology | NOR Flash | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 16 Mbit | Access Time | 12 ns | Grade | Industrial | ||
| Clock Frequency | 104 MHz | Voltage | 1.65V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 4 ms | Packaging | 8-VDFN (6x5) | ||
| Mounting Method | Surface Mount | Memory Interface | SPI | Memory Organization | 2M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of EN25QW16A-104WIP(2P) – 16Mbit Wide Range (1.65-3.6V) SPI NOR Flash, VDFN/WSON 6x5mm, Industrial (-40°C to +85°C)
The EN25QW16A-104WIP(2P) is a 16 Mbit serial NOR Flash memory device offering a wide supply voltage range and a serial SPI interface architecture. Designed for industrial-grade embedded storage, it provides uniform 4 Kbyte sectors, flexible erase/program operations and multiple SPI modes (standard, dual and quad) for scalable throughput.
This device targets industrial and embedded applications that require non-volatile code and data storage with configurable protection, low-power standby and a compact 8-contact VDFN/WSON (6×5 mm) package across an operating range of -40°C to +85°C.
Key Features
- Memory and Organization 16 M-bit (2,048 KByte) capacity organized as 2M × 8 with 256-byte programmable pages and 4 Kbyte uniform sectors (512 sectors total).
- Interface and Modes SPI compatible architecture supporting Standard, Dual and Quad SPI. Standard SPI pins include CLK, CS#, DI, DO, WP# and HOLD#; Quad and Dual I/O are supported for higher throughput.
- Clock & Performance 104 MHz clock rate supported for Standard, two-bit and four-bit data modes; 12 ns access time for fast read operations.
- Program / Erase Timing Page program time typically 1 ms; sector erase typically 100 ms; half-block 300 ms; block erase 500 ms; full chip erase typically 15 seconds.
- Power Full supply range 1.65 V to 3.6 V. Typical active current around 10 mA and typical power-down current ~1 μA for low-power standby.
- Reliability & Security Minimum 100K program/erase cycles per sector, 20-year data retention, lockable 3 × 1024-byte One-Time-Programmable (OTP) security sector, support for volatile status bits, and Read Unique ID feature.
- Flexible Protection Software and hardware write protection with WP# pin; supports write protection of all or portions of memory and individual sector/block protection with write suspend/resume.
- Standards & Discoverability Supports Serial Flash Discoverable Parameters (SFDP) signature for device parameter discovery.
- Package & Temperature 8-contact VDFN/WSON package (6×5 mm) in an industrial temperature grade from -40°C to +85°C; RoHS-compliant, Pb-free packaging.
Typical Applications
- Embedded Firmware Storage Persistent storage for boot code, firmware images and configuration data where sector-level erase and page programming are required for field updates.
- Field Upgrades & Patchable Code Use in systems that require selective block or sector updates—unprotect specific regions for modification while keeping other regions protected.
- Industrial Control & Instrumentation Non-volatile code and parameter storage for industrial controllers and instrumentation within the device’s -40°C to +85°C operating range.
- Data Logging & Configuration Storage Storage of calibration data, device configuration and small data logs with endurance and retention characteristics suitable for long-term use.
Unique Advantages
- Wide Supply Voltage Range: Operates from 1.65 V to 3.6 V, enabling flexibility across power domains and single-supply designs.
- Multi-Mode SPI Throughput: Standard, Dual and Quad SPI support with a 104 MHz clock rate enables scalable read/write bandwidth without changing the memory architecture.
- Compact Industrial Package: 8-contact VDFN/WSON (6×5 mm) footprint suits space-constrained PCBs while meeting industrial temperature requirements.
- Granular Erase & Protection: 4 Kbyte uniform sectors, individual sector/block erase and software/hardware protection make firmware management and secure updates straightforward.
- Low Power Standby: Typical 1 μA power-down current reduces standby energy use in battery-assisted or low-power systems.
- Long-Term Reliability: Specified minimum 100K program/erase cycles and 20-year data retention for durable field operation.
Why Choose EN25QW16A-104WIP(2P)?
The EN25QW16A-104WIP(2P) balances performance, flexibility and reliability for industrial embedded storage requirements. With a wide voltage range, 104 MHz SPI operation across standard, dual and quad modes, and sector-level erase/protection features, it fits designs that need field-updatable firmware, secure data regions and compact packaging.
This device is well suited to engineers building industrial controllers, instrumentation and embedded systems that require proven NOR Flash behaviors—sector architecture, endurance, retention and low-power standby—paired with a small VDFN/WSON footprint and industrial temperature rating.
Request a quote or submit an inquiry to obtain pricing, lead time and availability for EN25QW16A-104WIP(2P).
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A