 | | AS4C4M16SA-6TIN | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,047 | |
 | | AS4C4M16SA-6TINTR | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,157 | |
 | | AS4C4M16SA-7BCN | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 1,097 | |
 | | AS4C4M16SA-7BCNTR | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 282 | |
 | | AS4C4M16SA-7TCN | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 121 | |
 | | AS4C4M16SA-7TCNTR | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 614 | |
 | | AS4C4M16SB-6TIN | Alliance Memory, Inc. | IC DRAM 64MBIT LVTTL 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 117 | |
 | | AS4C4M16SB-6TINTR | Alliance Memory, Inc. | IC DRAM 64MBIT LVTTL 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 56 | |
 | | AS4C4M32D1-5BCN | Alliance Memory, Inc. | IC DRAM 128MBIT PARALLEL 144BGA | Memory | 144-LFBGA (12x12) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 12 ns | 175 | |
 | | AS4C4M32D1-5BIN | Alliance Memory, Inc. | IC DRAM 128MBIT PARALLEL 144BGA | Memory | 144-LFBGA (12x12) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 12 ns | 1,052 | |
 | | AS4C4M32D1A-5BCN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 144LFBGA | Memory | 144-LFBGA (12x12) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 12 ns | 797 | |
 | | AS4C4M32D1A-5BCNTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 144LFBGA | Memory | 144-LFBGA (12x12) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 12 ns | 893 | |
 | | AS4C4M32D1A-5BIN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 144LFBGA | Memory | 144-LFBGA (12x12) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 12 ns | 1,068 | |
 | | AS4C4M32D1A-5BINTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 144LFBGA | Memory | 144-LFBGA (12x12) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 12 ns | 1,071 | |
 | | AS4C4M32S-6BCN | Alliance Memory, Inc. | IC DRAM 128MBIT LVTTL 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 1,743 | |
 | | AS4C4M32S-6BCNTR | Alliance Memory, Inc. | IC DRAM 128MBIT LVTTL 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 1,280 | |
 | | AS4C4M32S-6BIN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 2 ns | 1,327 | |
 | | AS4C4M32S-6BINTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 2 ns | 837 | |
 | | AS4C4M32S-6TCN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 319 | |
 | | AS4C4M32S-6TCNTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 49 | |