AS4C4M16SA-6TIN

IC DRAM 64MBIT PAR 54TSOP II
Part Description

IC DRAM 64MBIT PAR 54TSOP II

Quantity 1,047 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerAlliance Memory, Inc.
Manufacturing StatusActive
Manufacturer Standard Lead Time8 Weeks
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of AS4C4M16SA-6TIN – IC DRAM 64MBIT PAR 54TSOP II

The AS4C4M16SA-6TIN is a 64 Mbit synchronous DRAM (SDRAM) organized as 4M × 16 with a parallel memory interface in a 54‑pin TSOP II package. It provides a 166 MHz clock frequency and a 5.4 ns access time for time-sensitive memory operations.

This device is suited to designs that require a compact parallel SDRAM solution with a 3.0 V to 3.6 V supply range and an extended operating temperature range of −40°C to 85°C.

Key Features

  • Core / Memory Architecture 64 Mbit SDRAM organized as 4M × 16, providing parallel DRAM memory format for systems that use conventional SDRAM organization.
  • Performance 166 MHz clock frequency with a 5.4 ns access time to support fast synchronous memory access.
  • Voltage / Power Operates from a 3.0 V to 3.6 V supply range, matching standard 3 V SDRAM power domains.
  • Interface Parallel memory interface suitable for designs that require parallel DRAM connectivity.
  • Package & Mounting Available in a 54‑TSOP II package (0.400", 10.16 mm width) for surface-mount PCB assembly.
  • Operating Temperature Rated for −40°C to 85°C (TA) to support a broad range of ambient conditions.

Typical Applications

  • Embedded memory subsystems — Use as a 64 Mbit parallel SDRAM component where 4M × 16 organization is required for system memory buffering.
  • Legacy and industrial electronics — Fits designs that accept a 54‑TSOP II package and require operation across −40°C to 85°C.
  • Board-level SDRAM expansion — Suitable for PCB implementations needing a 3.0 V–3.6 V parallel SDRAM device with 166 MHz clock capability.

Unique Advantages

  • Well-defined SDRAM organization: The 4M × 16 configuration provides a clear memory mapping for designers integrating a 64 Mbit DRAM.
  • Measured timing performance: 166 MHz clock and 5.4 ns access time offer predictable synchronous access characteristics.
  • Wide operating voltage: 3.0 V to 3.6 V supply compatibility simplifies use in standard 3 V power domains.
  • Extended temperature tolerance: Rated from −40°C to 85°C for applications requiring broader ambient temperature coverage.
  • Standard surface-mount package: 54‑TSOP II footprint enables compact board-level implementations and industry-standard assembly processes.

Why Choose AS4C4M16SA-6TIN?

The AS4C4M16SA-6TIN positions itself as a straightforward, specification-driven 64 Mbit SDRAM option for designs that require a parallel memory interface, a 4M × 16 organization, and defined timing characteristics (166 MHz clock, 5.4 ns access). Its 54‑TSOP II package and 3.0 V–3.6 V supply range make it practical for compact, board-level memory implementations that must operate across −40°C to 85°C.

This device is appropriate for engineers and procurement teams specifying a verifiable SDRAM component with clear electrical and mechanical attributes, enabling predictable integration into systems that accept the listed package, voltage, and temperature requirements.

To request a quote or check availability for the AS4C4M16SA-6TIN, please contact sales or submit a quote request with the part number and required quantities.

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