Suntsu’s DRAM memory catalog offers high-performance volatile memory solutions for data-intensive computing, industrial automation, networking, and embedded systems. Whether you need high-speed DDR4, LPDDR, or legacy SDRAM chips, our extensive inventory helps engineers and purchasing managers secure reliable components with minimal lead times. Use our advanced part search tool to filter by density, speed, configuration, or manufacturer to find the exact DRAM solution that will keep your production line running smoothly.
DRAM Memory
Total Products: 3,051
| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
| N/A | JSR364G168NHR-LA | Jeju Semiconductor Corporation | 4Gb DDR3L SDRAM, x16, 96‑FBGA, 1.35V | DRAM Memory | 96-BGA (7.5x13mm) | 1.35V | 0°C - 85°C | Access Time: 13.09 ns Clock Frequency: 1.066 GHz Grade: Commercial Memory Format: RAM Memory Interface: DDR3L SDRAM Memory Organization: x16 Memory Size: 4 Gbit Memory Type: Volatile Technology: SDRAM - DDR3L | 547 | ||
| N/A | JSR364G168NHR-LAI | Jeju Semiconductor Corporation | 4Gb DDR3L SDRAM (256M ×16, 1.35V, 96‑FBGA, Industrial) | DRAM Memory | 96-BGA (7.5x13mm) | 1.35V | -40°C - 95°C | Access Time: 13.09 ns Clock Frequency: 1.066 GHz Grade: Industrial Memory Format: RAM Memory Interface: DDR3L SDRAM Memory Organization: x16 Memory Size: 4 Gbit Memory Type: Volatile Technology: SDRAM - DDR3L | 1,903 | ||
| N/A | JSR364G168NHR-LI | Jeju Semiconductor Corporation | 4Gb DDR3L SDRAM, 256M×16, 1.35V, Industrial, 96‑FBGA | DRAM Memory | 96-BGA (7.5x13mm) | 1.35V | -40°C - 95°C | Access Time: 13.91 ns Clock Frequency: 933 MHz Grade: Industrial Memory Format: RAM Memory Interface: DDR3L SDRAM Memory Organization: x16 Memory Size: 4 Gbit Memory Type: Volatile Technology: SDRAM - DDR3L | 1,347 | ||
 | K4S510432D-UC75 | Samsung Semiconductor, Inc. | IC DRAM 512MBIT LVTTL 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 65 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 128M x 4 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 894 | ||
 | K4S510432D-UC75T00 | Samsung Semiconductor, Inc. | IC DRAM 512MBIT LVTTL 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 65 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 128M x 4 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 386 | ||
| N/A | N/A | KGD-128Mbx16-LPDDR2-SDRAM-1.2/1.8V | ESMT | LPDDR2 SDRAM KGD | DRAM Memory | N/A | 2.5V | N/A | Memory Size: N/A Clock Frequency: N/A Write Cycle Time Word Page: N/A Access Time: N/A Memory Type: Volatile Memory Format: DRAM Technology: LPDDR2 SDRAM Memory Organization: 128M x 16 Memory Interface: Parallel Grade: Known Good Die Qualification: N/A Packaging: N/A | 961 | |
| N/A | N/A | KGD-128Mbx16-LPDDR3-SDRAM-1.2V | ESMT | LPDDR3 SDRAM KGD | DRAM Memory | N/A | 2.5V | N/A | Memory Size: N/A Clock Frequency: N/A Write Cycle Time Word Page: N/A Access Time: N/A Memory Type: Volatile Memory Format: DRAM Technology: LPDDR3 SDRAM Memory Organization: 128M x 16 Memory Interface: Parallel Grade: Known Good Die Qualification: N/A Packaging: N/A | 1,409 | |
| N/A | N/A | KGD-128Mbx16/-256Mbx8-DDR3-1.35/1.5V | ESMT | DDR3 SDRAM KGD | DRAM Memory | N/A | 2.5V | N/A | Memory Size: N/A Clock Frequency: N/A Write Cycle Time Word Page: N/A Access Time: N/A Memory Type: Volatile Memory Format: DRAM Technology: DDR3 SDRAM Memory Organization: 128M x 16 / 256M x 8 Memory Interface: Parallel Grade: Known Good Die Qualification: N/A Packaging: N/A | 840 | |
| N/A | N/A | KGD-128Mbx32-LPDDR3-SDRAM-1.2V | ESMT | LPDDR3 SDRAM KGD | DRAM Memory | N/A | 2.5V | N/A | Memory Size: N/A Clock Frequency: N/A Write Cycle Time Word Page: N/A Access Time: N/A Memory Type: Volatile Memory Format: DRAM Technology: LPDDR3 SDRAM Memory Organization: 128M x 32 Memory Interface: Parallel Grade: Known Good Die Qualification: N/A Packaging: N/A | 625 | |
| N/A | N/A | KGD-16Mbx16-DDR-II-SDRAM-1.8V | ESMT | DDR2 SDRAM KGD | DRAM Memory | N/A | 2.5V | N/A | Memory Size: N/A Clock Frequency: N/A Write Cycle Time Word Page: N/A Access Time: N/A Memory Type: Volatile Memory Format: DRAM Technology: DDR SDRAM Memory Organization: 16M x 16 Memory Interface: Parallel Grade: Known Good Die Qualification: N/A Packaging: N/A | 44 | |
| N/A | N/A | KGD-16Mbx16-DDR-SDRAM-1.8V/2.5V | ESMT | DDR SDRAM KGD | DRAM Memory | N/A | 2.5V | N/A | Memory Size: N/A Clock Frequency: N/A Write Cycle Time Word Page: N/A Access Time: N/A Memory Type: Volatile Memory Format: DRAM Technology: DDR SDRAM Memory Organization: 16M x 16 Memory Interface: Parallel Grade: Known Good Die Qualification: N/A Packaging: N/A | 3 | |
| N/A | N/A | KGD-16Mbx16-LPDDR-SDRAM-1.8V | ESMT | LPDDR SDRAM KGD | DRAM Memory | N/A | 2.5V | N/A | Memory Size: N/A Clock Frequency: N/A Write Cycle Time Word Page: N/A Access Time: N/A Memory Type: Volatile Memory Format: DRAM Technology: LPDDR SDRAM Memory Organization: 16M x 16 Memory Interface: Parallel Grade: Known Good Die Qualification: N/A Packaging: N/A | 1,038 | |
| N/A | N/A | KGD-16Mbx16-LPSDR-SDRAM-1.8V | ESMT | SDRAM KGD | DRAM Memory | N/A | 2.5V | N/A | Memory Size: N/A Clock Frequency: N/A Write Cycle Time Word Page: N/A Access Time: N/A Memory Type: Volatile Memory Format: DRAM Technology: LPSDR SDRAM Memory Organization: 16M x 16 Memory Interface: Parallel Grade: Known Good Die Qualification: N/A Packaging: N/A | 750 | |
| N/A | N/A | KGD-16Mbx16-SDRAM-2.5V/3.3V | ESMT | SDRAM KGD | DRAM Memory | N/A | 2.5V | N/A | Memory Size: N/A Clock Frequency: N/A Write Cycle Time Word Page: N/A Access Time: N/A Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Organization: 16M x 16 Memory Interface: Parallel Grade: Known Good Die Qualification: N/A Packaging: N/A | 376 | |
| N/A | N/A | KGD-16Mbx32-LPDDR-SDRAM-1.8V | ESMT | LPDDR SDRAM KGD | DRAM Memory | N/A | 2.5V | N/A | Memory Size: N/A Clock Frequency: N/A Write Cycle Time Word Page: N/A Access Time: N/A Memory Type: Volatile Memory Format: DRAM Technology: LPDDR SDRAM Memory Organization: 16M x 32 Memory Interface: Parallel Grade: Known Good Die Qualification: N/A Packaging: N/A | 140 | |
| N/A | N/A | KGD-16Mbx32-LPDDR2-SDRAM-1.2V/1.8V | ESMT | LPDDR2 SDRAM KGD | DRAM Memory | N/A | 2.5V | N/A | Memory Size: N/A Clock Frequency: N/A Write Cycle Time Word Page: N/A Access Time: N/A Memory Type: Volatile Memory Format: DRAM Technology: LPDDR2 SDRAM Memory Organization: 16M x 32 Memory Interface: Parallel Grade: Known Good Die Qualification: N/A Packaging: N/A | 415 | |
| N/A | N/A | KGD-16Mbx32-LPSDR-SDRAM-1.8V | ESMT | SDRAM KGD | DRAM Memory | N/A | 2.5V | N/A | Memory Size: N/A Clock Frequency: N/A Write Cycle Time Word Page: N/A Access Time: N/A Memory Type: Volatile Memory Format: DRAM Technology: LPSDR SDRAM Memory Organization: 16M x 32 Memory Interface: Parallel Grade: Known Good Die Qualification: N/A Packaging: N/A | 511 | |
| N/A | N/A | KGD-1Gb-SLC(x1,-x2,-x4)-Internal-ECC,-1.8V/3V | ESMT | Memory KGD | DRAM Memory | N/A | 2.5V | N/A | Memory Size: N/A Clock Frequency: N/A Write Cycle Time Word Page: N/A Access Time: N/A Memory Type: Non-Volatile Memory Format: DRAM Technology: DDR SDRAM Memory Organization: 1G x 8 Memory Interface: Parallel Grade: Known Good Die Qualification: N/A Packaging: N/A | 264 | |
| N/A | N/A | KGD-1Mbx16-SDRAM-1.8V/2.5V/3.3V | ESMT | SDRAM KGD | DRAM Memory | N/A | 2.5V | N/A | Memory Size: N/A Clock Frequency: N/A Write Cycle Time Word Page: N/A Access Time: N/A Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Organization: 1M x 16 Memory Interface: Parallel Grade: Known Good Die Qualification: N/A Packaging: N/A | 1,049 | |
| N/A | N/A | KGD-256Mbx16-DDR4-1.2V | ESMT | DDR4 SDRAM KGD | DRAM Memory | N/A | 2.5V | N/A | Memory Size: N/A Clock Frequency: N/A Write Cycle Time Word Page: N/A Access Time: N/A Memory Type: Volatile Memory Format: DRAM Technology: DDR4 SDRAM Memory Organization: 256M x 16 Memory Interface: Parallel Grade: Known Good Die Qualification: N/A Packaging: N/A | 1,423 |
About DRAM Memory
Dynamic Random-Access Memory (DRAM) is a type of high-density, volatile semiconductor memory designed for quick data access and low-latency processing. It requires a continuous power supply and a dynamic refresh cycle to maintain stored information. DRAM serves as the primary working memory in digital systems, enabling microprocessors and microcontrollers to efficiently read and write active data. The DRAM category encompasses various generations and form factors, including standard DDR SDRAM, low-power LPDDR for energy-sensitive mobile devices, and legacy DDR2 or DDR3 variants that are customized for long-lifecycle industrial applications.
Engineers evaluate key performance metrics when specifying DRAM chips, including clock speed, data rate, bus width, and operating temperature range, in order to maximize system throughput. These memory integrated circuits (ICs) are essential components in enterprise computing, telecommunications infrastructure, automotive infotainment, and industrial automation. Suntsu offers a comprehensive selection of reliable DRAM solutions that seamlessly integrate with advanced processors, field-programmable gate arrays (FPGAs), and other complementary memory components, ensuring optimal performance in demanding digital designs.
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