JSR364G168NHR-LA

4Gb DDR3L SDRAM, x16, 96‑FBGA, 1.35V
Part Description

4Gb DDR3L SDRAM, x16, 96‑FBGA, 1.35V

Quantity 547 Available (as of June 16, 2026)
Product CategoryDRAM Memory
ManufacturerJeju Semiconductor Corporation
Manufacturing StatusMass Production
Manufacturer Standard Lead TimeContact Us
Datasheet

Specifications & Environmental

Device Package96-BGA (7.5x13mm)Memory FormatRAMTechnologySDRAM - DDR3L
Memory Size4 GbitAccess Time13.09 nsGradeCommercial
Clock Frequency1.066 GHzVoltage1.35VMemory TypeVolatile
Operating Temperature0°C - 85°CMounting MethodSurface MountMemory InterfaceDDR3L SDRAM
Memory Organizationx16Moisture Sensitivity Level3RoHS ComplianceCompliant
REACH ComplianceREACH UnknownECCNEAR99HTS Code8542.32.00.36

Overview of JSR364G168NHR-LA – 4Gb DDR3L SDRAM, x16, 96‑FBGA, 1.35V

The JSR364G168NHR-LA is a 4 Gbit DDR3L SDRAM device organized as 256M × 16, delivered in a 96‑ball FBGA (7.5 × 13.0 mm) surface‑mount package. It is a commercial‑grade, low‑voltage DDR3 memory optimized for system designs that require 1.35 V operation, high data throughput and standard DDR3 interface timing options.

Built on DDR3L architecture, the device supports high data rates and programmable memory timing options to match common DDR3 speed grades (including DDR3‑2133, DDR3‑1866 and DDR3‑1600), while providing on‑die termination and self‑refresh capabilities for robust board‑level integration.

Key Features

  • Memory Core  4 Gbit DDR3L SDRAM organized as 256M × 16 (x16) for dense on‑board memory.
  • Performance  Supports DDR3 timing grades including DDR3‑2133 (CL14), DDR3‑1866 (CL13) and DDR3‑1600 (CL11); clock frequency listed at 1.066 GHz with an access time of 13.09 ns for applicable speed grades.
  • Low‑Voltage Operation  VDD = VDDQ = 1.35 V nominal (operating range 1.283–1.45 V) with backward compatibility to 1.5 V operation per the device family specification.
  • DDR3 Interface & Timing  Differential clock inputs (CK/CKB), differential bidirectional data strobe (DQS), 8‑bit prefetch architecture, programmable CAS latency (CL), additive latency (AL) and CAS write latency (CWL).
  • Memory System Features  8 internal banks, selectable burst length (BL8 / BC4 on‑the‑fly), nominal and dynamic on‑die termination (ODT), write leveling, automatic self‑refresh and output driver calibration.
  • Package & Mounting  96‑ball FBGA, surface‑mount (7.5 × 13.0 mm) for compact board integration.
  • Commercial Temperature Grade  Operating temperature range: 0 °C to 85 °C, suitable for commercial applications.
  • Compliance  RoHS compliant (lead‑free, halogen‑free package options noted in the device family).

Typical Applications

  • Commercial embedded systems  Provides 4 Gb of DDR3L storage in a compact FBGA footprint for general purpose commercial‑grade boards and modules.
  • Memory expansion on system boards  x16 organization and standard DDR3 timing options allow straightforward integration as on‑board DRAM for systems targeting DDR3‑2133/1866/1600 performance targets.
  • Compact, surface‑mount designs  96‑ball FBGA package (7.5 × 13.0 mm) supports high‑density board layouts where board real estate is constrained.

Unique Advantages

  • Low‑voltage operation  1.35 V nominal supply reduces memory power consumption compared with higher voltage DDR3 variants while maintaining backwards compatibility with 1.5 V systems.
  • Flexible timing support  Multiple supported speed grades (including DDR3‑2133, DDR3‑1866 and DDR3‑1600) let designers tune performance versus system constraints.
  • Robust DDR3 feature set  On‑die termination, write leveling, selectable burst lengths and self‑refresh improve signal integrity and simplify timing closure on modern boards.
  • Small, manufacturable package  96‑FBGA surface‑mount package (7.5 × 13.0 mm) balances density and assembly practicality for volume production.
  • Commercial temperature rating  0 °C to 85 °C specification aligns with a wide range of commercial applications and environments.
  • RoHS compliant  Lead‑free, halogen‑free packaging options support regulatory and environmental requirements.

Why Choose JSR364G168NHR-LA?

The JSR364G168NHR-LA delivers a compact, commercially rated DDR3L memory solution offering 4 Gbit capacity, x16 organization and support for industry DDR3 speed grades. Its low‑voltage 1.35 V operation, standard DDR3 interface features and FBGA mounting make it suitable for board‑level memory expansions where power, footprint and timing flexibility matter.

This device is well suited for designers and manufacturers targeting commercial systems that require verifiable DDR3L performance, standard programmability of latency and on‑die features that aid signal integrity and system reliability over the product lifecycle.

Request a quote today to check availability, pricing and lead times for JSR364G168NHR-LA and to discuss volume or delivery requirements for your next design cycle.

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    Date Founded: 2000


    Headquarters: Jeju-si, Jeju-do, Republic of Korea


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