JSR364G168NHR-LAI

The JSR364G168NHR-LAI is a 4 Gbit DDR3L SDRAM device organized as 256M ×16. It implements DDR3L low‑voltage SDRAM architecture with a standard DDR3L interface and is intended for designs that require high‑density, external volatile memory on surface‑mount 96‑ball FBGA.

With a nominal supply of 1.35V and an industrial operating range, this device targets embedded and industrial applications that need robust temperature performance combined with DDR3 timing features and on‑die memory functions for system memory expansion.

Key Features

• Memory Core  The device provides 4 Gbit capacity organized as 256M ×16 with 8 internal banks and a fixed burst length (BL) of 8, plus burst chop (BC) of 4 selectable via MRS.
• DDR3L Interface & Architecture  Standard DDR3L SDRAM interface with differential bidirectional data strobe, differential clock inputs (CK, CKB) and an 8n‑bit prefetch architecture.
• Performance  Key timing example: access time 13.09 ns with a listed clock frequency of 1.066 GHz for high‑speed DDR3L operation; supports programmable CAS (CL), additive latency (AL) and CAS write latency (CWL).
• Power  Low‑voltage operation at VDD = VDDQ = 1.35V (operating range 1.283–1.45V) and backward compatibility to 1.5V devices as documented.
• On‑Die Features  Nominal and dynamic on‑die termination (ODT), write leveling, automatic/self refresh modes, and output driver calibration for reliable signal integrity and memory timing control.
• Package & Mounting  Surface mount 96‑ball FBGA package (96‑BGA, 7.5 × 13.0 mm) optimized for compact board layouts.
• Industrial Temperature Range  Rated for −40°C to +95°C operation, suitable for extended‑temperature applications.
• Compliance  Lead‑free and halogen‑free package; RoHS compliant.

Typical Applications

• Industrial embedded systems  Use as external system memory where extended temperature range and DDR3L performance are required.
• Board‑level memory expansion  High‑density 4Gb device for compact modules and daughter cards needing surface‑mount FBGA memory.
• Memory subsystems in compact equipment  Suitable for designs that require a 256M ×16 DDR3L memory organization and on‑die features like ODT and self‑refresh.

Unique Advantages

• High density in a compact FBGA: 4 Gbit capacity in a 96‑ball FBGA (7.5 × 13.0 mm) reduces board area for high‑memory designs.
• Low‑voltage operation: 1.35V nominal supply reduces system power compared with higher‑voltage DDR variants while remaining backward compatible to 1.5V.
• Industrial temperature support: Rated −40°C to +95°C for reliable operation in extended‑temperature environments.
• Advanced DDR3 features: On‑die termination, write leveling, automatic/self refresh and programmable CAS/AL/CWL enable flexible timing and reliable signal integrity.
• Standards‑based interface: Standard DDR3L SDRAM interface and timing options allow integration into existing DDR3L memory controllers and designs.

Why Choose JSR364G168NHR-LAI?

The JSR364G168NHR-LAI positions itself as a robust, industrial‑grade DDR3L memory option delivering 4 Gbit density in a space‑efficient 96‑FBGA package. Its 1.35V low‑voltage operation, standard DDR3L interface, and on‑die features such as ODT, write leveling and self‑refresh make it suitable for embedded and industrial designs that require dependable external SDRAM with flexible timing.

Designers seeking a compact, RoHS‑compliant memory device with extended temperature operation and proven DDR3L capabilities will find JSR364G168NHR-LAI appropriate for scalable, long‑life deployments where board area, power and thermal range are key considerations.

Request a quote or submit an inquiry today to add JSR364G168NHR-LAI DDR3L memory to your design and receive pricing and availability details.