JSR364G168NHR-L

The JSR364G168NHR-L is a 4 Gbit DDR3L SDRAM device supplied in a 96‑ball FBGA package. It implements low‑voltage DDR3L architecture (VDD = 1.35V nominal) and draws on DDR3 series functionality such as differential clock and data strobes, on‑die termination and programmable CAS timing.

Designed for commercial‑grade memory subsystems, this device delivers high data‑rate DDR3L operation with a 933 MHz clock frequency and an access time of 13.91 ns, in a compact surface‑mount 96‑BGA (7.5 × 13.0 mm) footprint.

Key Features

• Memory Core 4 Gbit DDR3L SDRAM organized as x8; 8 internal banks and 8n‑bit prefetch architecture for standard DDR3 access patterns.
• Performance 933 MHz clock frequency (DDR3‑1866 data‑rate range supported in the series) with documented access time of 13.91 ns.
• Low‑Voltage Operation VDD = VDDQ = 1.35 V nominal (1.283–1.45 V range) with backward compatibility to 1.5 V operation as specified in the series datasheet.
• Memory Interface & Timing DDR3L SDRAM interface with programmable CAS (CL), write latency (CWL) and additive latency (AL); fixed burst length BL8 and burst‑chop BC4, selectable on the fly.
• Signal Integrity & Calibration Differential bidirectional data strobe, differential clock inputs, nominal and dynamic on‑die termination (ODT), write‑leveling and output driver calibration as described in the series documentation.
• Package & Assembly Surface‑mount 96‑FBGA (96‑BGA, 7.5 × 13.0 mm) for compact board integration and high routing density.
• Commercial Temperature Grade Rated for operation from 0 °C to 85 °C.
• Compliance RoHS compliant, lead‑free and halogen‑free FBGA package options as described in the product series materials.

Unique Advantages

• Low‑voltage, high‑speed DDR3L operation: 1.35 V nominal supply supports reduced power consumption while enabling DDR3 data‑rate operation (series timing options include DDR3‑1866 and DDR3‑2133).
• Programmable timing flexibility: Configurable CL, CWL and AL settings allow designers to tune latency and throughput to match system timing requirements.
• Integrated signal conditioning: On‑die termination, write‑leveling and output driver calibration simplify board‑level signal integrity management for high‑speed designs.
• Compact, production‑friendly package: 96‑FBGA (7.5 × 13.0 mm) surface‑mount package reduces PCB area while supporting standard BGA assembly processes.
• Commercial temperature range: 0 °C to 85 °C rating aligns with a wide range of standard electronics and industrial‑style applications.
• Standards‑based DDR3 feature set: Fixed and selectable burst lengths, 8 internal banks and self‑refresh capabilities provide predictable memory behavior consistent with DDR3/DDR3L system architectures.

Why Choose JSR364G168NHR-L?

JSR364G168NHR-L positions itself as a straightforward, standards‑based 4 Gbit DDR3L SDRAM option for designs that require low‑voltage DDR3 performance in a compact BGA package. Its combination of 1.35 V operation, documented access time (13.91 ns), programmable timing and on‑die signal features offers designers measurable flexibility for memory subsystem integration.

This device is well suited to commercial‑grade designs where a compact footprint, RoHS compliance and established DDR3L feature support are required. The documented series features such as ODT, write‑leveling and selectable burst modes help simplify board‑level signal and timing management over the product lifecycle.

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