 | | IS25WX256-JHLA3-TR | Integrated Silicon Solution Inc | IC FLASH 256MBIT SPI/OCT 24TFBGA | Flash Memory | 24-TFBGA (6x8) | 1.7V ~ 2V | -40°C ~ 125°C (TA) | Memory Interface: SPI - Octal I/O Memory Organization: 32M x 8 Write Cycle Time Word Page: N/A | 1,601 | |
 | | IS25WX256-JHLE | Integrated Silicon Solution Inc | IC FLASH 256MBIT SPI/OCT 24TFBGA | Flash Memory | 24-TFBGA (6x8) | 1.7V ~ 2V | -40°C ~ 105°C (TA) | Memory Interface: SPI - Octal I/O Memory Organization: 32M x 8 Write Cycle Time Word Page: N/A | 678 | |
 | | IS25WX256-JHLE-TR | Integrated Silicon Solution Inc | IC FLASH 256MBIT SPI/OCT 24TFBGA | Flash Memory | 24-TFBGA (6x8) | 1.7V ~ 2V | -40°C ~ 105°C (TA) | Memory Interface: SPI - Octal I/O Memory Organization: 32M x 8 Write Cycle Time Word Page: N/A | 748 | |
 | | IS25WX512M-JHE-TR | Integrated Silicon Solution Inc | IC FLASH 512MBIT SPI/OCT 24TFBGA | Flash Memory | 24-TFBGA (6x8) | 1.7V ~ 2V | -40°C ~ 105°C (TA) | Memory Interface: SPI - Octal I/O Memory Organization: 64M x 8 Write Cycle Time Word Page: N/A | 742 | |
 | | IS25WX512M-JHLA3 | Integrated Silicon Solution Inc | IC FLASH 512MBIT SPI/OCT 24TFBGA | Flash Memory | 24-TFBGA (6x8) | 1.7V ~ 2V | -40°C ~ 125°C (TA) | Memory Interface: SPI - Octal I/O Memory Organization: 64M x 8 Write Cycle Time Word Page: N/A | 12 | |
 | | IS25WX512M-JHLA3-TR | Integrated Silicon Solution Inc | IC FLASH 512MBIT SPI/OCT 24TFBGA | Flash Memory | 24-TFBGA (6x8) | 1.7V ~ 2V | -40°C ~ 125°C (TA) | Memory Interface: SPI - Octal I/O Memory Organization: 64M x 8 Write Cycle Time Word Page: N/A | 1,773 | |
 | | IS25WX512M-JHLE | Integrated Silicon Solution Inc | IC FLASH 512MBIT SPI/OCT 24TFBGA | Flash Memory | 24-TFBGA (6x8) | 1.7V ~ 2V | -40°C ~ 105°C (TA) | Memory Interface: SPI - Octal I/O Memory Organization: 64M x 8 Write Cycle Time Word Page: N/A | 1,217 | |
 | | IS27TH064G21-JCLA2 | Integrated Silicon Solution Inc | 64GB, 153 BALL FBGA, 3.3V, ROHS, | Flash Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 771 | |
| N/A | | IS27TH064G21-JCLI | Integrated Silicon Solution Inc | 64GB, 153 BALL FBGA, 3.3V, ROHS | Flash Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 1,730 | |
| N/A | | IS27TH064G31-JCLA2 | Integrated Silicon Solution Inc | 64GB, 153 BALL FBGA, 3.3V, ROHS, | Flash Memory | 153-VFBGA (11.5x13) | 2.25V ~ 2.75V | -40°C ~ 105°C (TA) | Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 861 | |
 | | IS27TH064G31-JCLI | Integrated Silicon Solution Inc | 64GB, 153 BALL FBGA, 3.3V, ROHS | Flash Memory | 153-VFBGA (11.5x13) | 2.25V ~ 2.75V | -40°C ~ 85°C (TA) | Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 204 | |
| N/A | | JS27HP1G08SCDA-45 | Jeju Semiconductor Corporation | 2K page 4-bit ECC 64 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 1.8V | -40°C - 85°C | Clock Frequency: 22.22 MHz Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 429 | |
| N/A | | JS27HP2G08SDDA-45 | Jeju Semiconductor Corporation | 2K page 4-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 1.8V | -40°C - 85°C | Clock Frequency: 22.22 MHz Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 809 | |
| N/A | | JS27HP4G08SDDA-45 | Jeju Semiconductor Corporation | 2K page 4-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 1.8V | -40°C - 85°C | Clock Frequency: 22.22 MHz Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 28 | |
| N/A | | JS27HP4G08SDDA-45M | Jeju Semiconductor Corporation | 2K page 4-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 1.8V | -40°C - 105°C | Clock Frequency: 22.22 MHz Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 898 | |
| N/A | | JS27HP4G08SFDA-45 | Jeju Semiconductor Corporation | 4K page 4-bit ECC 256 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 1.8V | -40°C - 85°C | Clock Frequency: 22.22 MHz Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 416 | |
| N/A | | JS27HP4G16SDDA-45 | Jeju Semiconductor Corporation | 2K page 4-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 1.8V | -40°C - 85°C | Clock Frequency: 22.22 MHz Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 116 | |
| N/A | | JS27HP8G08SDDA-45 | Jeju Semiconductor Corporation | 2K page 4-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 1.8V | -40°C - 85°C | Clock Frequency: 22.22 MHz Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 1,334 | |
| N/A | | JS27HP8G08SDDA-45M | Jeju Semiconductor Corporation | 2K page 4-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 1.8V | -40°C - 105°C | Clock Frequency: 22.22 MHz Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 696 | |
| N/A | | JS27HU1G08SCDA-25 | Jeju Semiconductor Corporation | 2K page 4-bit ECC 64 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 3.3V | -40°C - 85°C | Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 907 | |