| N/A | | JS27HU1G08SCDA-25M | Jeju Semiconductor Corporation | 2K page 4-bit ECC 64 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 3.3V | -40°C - 105°C | Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 1,464 | |
| N/A | | JS27HU2G08SDDA-25 | Jeju Semiconductor Corporation | 2K page 4-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 3.3V | -40°C - 85°C | Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 1,243 | |
| N/A | | JS27HU2G08SDDA-25M | Jeju Semiconductor Corporation | 2K page 4-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 3.3V | -40°C - 105°C | Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 1,625 | |
| N/A | | JS27HU4G08SDDA-25 | Jeju Semiconductor Corporation | 2K page 4-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 3.3V | -40°C - 85°C | Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 356 | |
| N/A | | JS27HU4G08SDDA-25M | Jeju Semiconductor Corporation | 2K page 4-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 3.3V | -40°C - 105°C | Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 118 | |
| N/A | | JS27HU8G08SDDA-25 | Jeju Semiconductor Corporation | 2K page 4-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 3.3V | -40°C - 85°C | Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 1,419 | |
| N/A | | JS27HU8G08SJDA-25 | Jeju Semiconductor Corporation | 2K page 1-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 3.3V | -40°C - 85°C | Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 556 | |
| N/A | | JS27HU8G08SKDA-25 | Jeju Semiconductor Corporation | 2K page 1-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 3.3V | -40°C - 85°C | Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 1,682 | |
| N/A | N/A | KGD-128Mbx8-SLC-NAND-Flash,-x8,-1.8V/3V | ESMT | NAND Flash KGD | Flash Memory | N/A | 2.5V | N/A | Write Cycle Time Word Page: N/A Technology: SLC NAND Flash Memory Organization: 128M x 8 Memory Interface: Parallel | 1,426 | |
| N/A | N/A | KGD-256Mbx8-SLC-NAND-Flash,-x8,-1.8V/3.3V | ESMT | NAND Flash KGD | Flash Memory | N/A | 2.5V | N/A | Write Cycle Time Word Page: N/A Technology: SLC NAND Flash Memory Organization: 256M x 8 Memory Interface: Parallel | 440 | |
| N/A | N/A | KGD-512Mbx8-SLC-NAND-Flash,-x8,-1.8V/-3V | ESMT | NAND Flash KGD | Flash Memory | N/A | 2.5V | N/A | Write Cycle Time Word Page: N/A Technology: SLC NAND Flash Memory Organization: 512M x 8 Memory Interface: Parallel | 800 | |
 | | M30LW128D110N6 | STMicroelectronics | IC FLASH 128MBIT PARALLEL 56TSOP | Flash Memory | 56-TSOP | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 8 x 2, 4M x 16 Packaging: 56-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: 110 ns | 246 | |
 | | M30LW128D110ZA6 | STMicroelectronics | IC FLASH 128MBIT PARALLEL 64TBGA | Flash Memory | 64-TBGA (10x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 8 x 2, 4M x 16 Write Cycle Time Word Page: 110 ns | 75 | |
 | | MT28F128J3BS-12 ET | Micron Technology Inc. | IC FLASH 128MBIT PARALLEL 64FBGA | Flash Memory | 64-FBGA (10x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8, 8M x 16 Write Cycle Time Word Page: N/A | 1,553 | |
 | | MT28F128J3BS-12 ET TR | Micron Technology Inc. | IC FLASH 128MBIT PARALLEL 64FBGA | Flash Memory | 64-FBGA (10x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8, 8M x 16 Write Cycle Time Word Page: N/A | 1,681 | |
 | | MT28F128J3BS-12 MET | Micron Technology Inc. | IC FLASH 128MBIT PARALLEL 64FBGA | Flash Memory | 64-FBGA (10x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8, 8M x 16 Write Cycle Time Word Page: N/A | 919 | |
 | | MT28F128J3BS-12 MET TR | Micron Technology Inc. | IC FLASH 128MBIT PARALLEL 64FBGA | Flash Memory | 64-FBGA (10x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8, 8M x 16 Write Cycle Time Word Page: N/A | 1,702 | |
 | | MT28F128J3FS-12 ET TR | Micron Technology Inc. | IC FLASH 128MBIT PARALLEL 64FBGA | Flash Memory | 64-FBGA (10x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8, 8M x 16 Write Cycle Time Word Page: N/A | 1,058 | |
 | | MT28F128J3FS-12 MET | Micron Technology Inc. | IC FLASH 128MBIT PARALLEL 64FBGA | Flash Memory | 64-FBGA (10x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8, 8M x 16 Write Cycle Time Word Page: N/A | 776 | |
 | | MT28F128J3FS-12 MET TR | Micron Technology Inc. | IC FLASH 128MBIT PARALLEL 64FBGA | Flash Memory | 64-FBGA (10x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8, 8M x 16 Write Cycle Time Word Page: N/A | 1,318 | |