AS4C2M32S-6TCN

The AS4C2M32S-6TCN from Alliance Memory is a 64-megabit synchronous dynamic random access memory (SDRAM) organized as 2 million words by 32 bits. This parallel interface DRAM provides high-speed data access with a 166MHz clock frequency and 5.5ns access time, making it suitable for embedded systems and industrial applications requiring reliable volatile memory storage. Operating from a 3V to 3.6V supply, this memory device delivers proven SDRAM technology in an 86-pin TSOP II package.

Key Features

• Memory Configuration - 64Mbit capacity organized as 2M x 32, providing a wide 32-bit data path for efficient parallel data transfer in embedded applications.
• Clock Speed - 166MHz clock frequency with 5.5ns access time enables fast data retrieval for time-sensitive applications.
• Power Supply - Operates on 3V to 3.6V supply voltage, compatible with standard 3.3V logic systems.
• Write Performance - 2ns write cycle time supports rapid data updates and high-throughput operations.
• Package - Available in an 86-pin TSOP II (10.16mm width) surface mount package for space-efficient PCB layouts.
• Operating Temperature Range - Rated for 0°C to 70°C ambient temperature operation, suitable for standard commercial environments.

Typical Applications

• Industrial Control Systems - This SDRAM provides volatile working memory for PLCs, motion controllers, and HMI panels where the wide 32-bit data bus accelerates processing of control algorithms and real-time data handling.
• Embedded Computing - The parallel interface and proven SDRAM architecture make this device suitable for legacy embedded systems and designs requiring drop-in replacement memory with established timing characteristics.
• Data Buffering - The 64Mbit capacity and fast access times enable temporary storage and buffering of sensor data, communication packets, or image frames in data acquisition and processing systems.
• Test and Measurement Equipment - Provides high-speed memory for waveform capture, signal analysis, and data logging applications where the 166MHz clock frequency supports rapid sampling and storage requirements.

Unique Advantages

• Wide Data Bus: The 32-bit parallel organization reduces the number of memory access cycles needed for multi-byte transfers, streamlining data movement in 32-bit processor architectures.
• Proven SDRAM Technology: Synchronous operation simplifies timing design and interface logic compared to asynchronous DRAM, reducing development complexity.
• Standard Voltage Operation: 3.3V supply compatibility eliminates the need for voltage translation circuits when interfacing with common microcontrollers and processors.
• Space-Efficient Packaging: The TSOP II footprint provides a compact surface mount solution that conserves valuable board area in size-constrained designs.
• Fast Write Performance: The 2ns write cycle time ensures minimal latency for memory updates, supporting applications with frequent data writes.
• Commercial Temperature Rating: The 0°C to 70°C operating range covers standard office and controlled industrial environments without requiring extended temperature qualification.

Why Choose AS4C2M32S-6TCN?

The AS4C2M32S-6TCN offers a straightforward SDRAM solution for designs requiring parallel memory with a 32-bit data interface. Its 166MHz clock frequency and 5.5ns access time deliver responsive performance for embedded applications, while the standard 3.3V supply voltage ensures compatibility with existing system architectures. The device is well-suited for industrial control, embedded computing, and data buffering applications where proven SDRAM technology provides a reliable foundation for system memory requirements.

Note that this part has an Obsolete lifecycle status. Design teams should evaluate long-term availability and consider alternative memory solutions for new product development to ensure ongoing supply chain support.

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For pricing information, availability, and technical support for the AS4C2M32S-6TCN, contact our sales team to discuss your project requirements and receive a customized quote.