AS4C2M32S-6TIN

The AS4C2M32S-6TIN is a 64 Mbit synchronous DRAM (SDRAM) organized as 2M × 32 bits, implemented as four internal 512K × 32 banks with a fully synchronous interface. It provides pipelined operation, programmable burst modes and byte-level masking for parallel memory subsystems.

Designed for systems that require high memory bandwidth and deterministic synchronous operation, this device targets applications that benefit from selectable CAS latency, multiple burst lengths and an industrial operating temperature range of −40 °C to 85 °C.

Key Features

• Memory Architecture Internal organization as 4 banks of 512K × 32 bits (2M × 32) providing 64 Mbit total capacity and banked operation for concurrent access patterns.
• Synchronous, Pipelined Operation Fully synchronous SDRAM with internal pipelined architecture; all signals register on the rising edge of CLK for predictable timing.
• Speed & Timing Rated for 166 MHz operation (AS4C2M32S-6TIN) with fast access time (tAC) up to 5.5 ns and selectable CAS latency (2 or 3).
• Flexible Burst Control Programmable burst lengths (1, 2, 4, 8 or full page), sequential or interleaved burst type, burst-read-single-write and burst stop functions.
• Byte Masking & Data Control Individual byte control via DQM0–DQM3 for selective data masking during read/write operations.
• Refresh & Power Supports Auto Refresh and Self Refresh with 4096 refresh cycles/64 ms; single +3.3 V ±0.3 V supply.
• Interface & Signalling Parallel memory interface with LVTTL signaling and standard SDRAM command set (RAS#, CAS#, WE#, CS#, CKE).
• Package 86-pin TSOP II (400 × 875 mil, 0.50 mm pin pitch) package, Pb and halogen free as specified in the datasheet.
• Industrial Temperature Rated operating temperature range −40 °C to 85 °C (TA) for industrial applications.

Typical Applications

• High-bandwidth memory subsystems Used where synchronous, burst-oriented DRAM is required to sustain sequential and pipelined data transfers.
• Industrial embedded systems Provides dependable operation across an industrial temperature range (−40 °C to 85 °C) for harsh environments.
• Systems requiring programmable burst control Useful in designs that need selectable burst lengths, CAS latency and byte masking for optimized data throughput.

Unique Advantages

• High-speed synchronous access: 166 MHz rating and 5.5 ns access time enable low-latency, high-throughput memory operations.
• Banked, pipelined architecture: Four internal banks and pipelined operation allow overlapping commands to improve throughput in burst transfers.
• Flexible data handling: Programmable burst lengths, burst type options and DQM0–DQM3 byte masking provide fine-grained control over data transfers.
• Industrial temperature support: −40 °C to 85 °C rating supports deployment in temperature-sensitive and industrial applications.
• Standard parallel interface: LVTTL-compatible parallel signaling and standard SDRAM command set simplify integration into existing memory subsystems.
• Compact TSOP II package: 86-pin TSOP II footprint with 0.50 mm pitch delivers a high pin-count solution in a space-efficient package.

Why Choose AS4C2M32S-6TIN?

The AS4C2M32S-6TIN combines a 64 Mbit SDRAM capacity with synchronous, pipelined operation and programmable burst modes to address designs that need predictable, high-throughput parallel memory. Its selectable CAS latency, byte-level masking and four-bank architecture enable designers to tune performance for specific access patterns.

With a single +3.3 V supply, LVTTL interface, Pb and halogen-free package option and an industrial temperature rating, this device is suited for embedded and industrial applications that require robust, high-bandwidth DRAM in a compact TSOP II package.

Request a quote or submit an inquiry for pricing and lead-time information for the AS4C2M32S-6TIN. Provide part number and quantity to receive a formal quote.