AS4C8M16S-6BIN
| Part Description |
IC DRAM 128MBIT PAR 54TFBGA |
|---|---|
| Quantity | 539 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Alliance Memory, Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TFBGA (8x8) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5 ns | Grade | Industrial | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 2 ns | Packaging | 54-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B2A | HTS Code | 8542.32.0002 |
Overview of AS4C8M16S-6BIN - 128Mbit Parallel SDRAM
The AS4C8M16S-6BIN from Alliance Memory is a 128-megabit synchronous dynamic random access memory (SDRAM) chip organized as 8M x 16 and housed in a compact 54-pin TFBGA package. This volatile memory solution operates at 166 MHz clock frequency and supports standard 3V to 3.6V power supply, making it suitable for embedded systems requiring reliable parallel memory with fast access times. The device offers a 5 nanosecond access time and 2 nanosecond write cycle, delivering responsive performance for data-intensive operations.
Key Features
- 128Mbit SDRAM Core - Provides 8M x 16 memory organization with synchronous operation at up to 166 MHz, enabling predictable timing for system integration.
- Fast Access Performance - Features 5 nanosecond access time and 2 nanosecond write cycle time for responsive read and write operations in real-time applications.
- Standard Parallel Interface - Uses conventional parallel data bus architecture, simplifying integration with microcontrollers and processors that require traditional memory interfaces.
- Compact 54-TFBGA Package - Delivered in an 8mm x 8mm thin fine-pitch ball grid array, optimizing board space in space-constrained designs.
- Extended Temperature Range - Operates reliably across -40°C to 85°C ambient temperatures, supporting industrial and automotive-grade environmental conditions.
- 3V to 3.6V Operation - Compatible with standard 3.3V logic systems, reducing power supply complexity and enabling straightforward integration.
Typical Applications
- Industrial Control Systems - This SDRAM serves as working memory in programmable logic controllers (PLCs) and human-machine interfaces (HMIs) where the extended temperature range ensures consistent operation in harsh factory environments.
- Embedded Computing - Provides volatile memory for embedded processors in set-top boxes, point-of-sale terminals, and medical devices requiring compact form factors and reliable parallel memory access.
- Legacy System Upgrades - Offers a memory solution for maintaining or upgrading existing designs built around parallel SDRAM interfaces, preserving compatibility with established architectures.
- Test and Measurement Equipment - Supports high-speed data buffering in oscilloscopes, signal analyzers, and automated test equipment where fast write cycles enable real-time data capture.
Unique Advantages
- Proven SDRAM Technology: Leverages mature synchronous DRAM architecture with well-understood timing characteristics, reducing development risk and accelerating time-to-market.
- Simplified System Timing: Synchronous operation at defined clock frequencies eliminates asynchronous timing complexities, making memory controller design more straightforward.
- Compact Footprint: The 8mm x 8mm TFBGA package minimizes PCB area requirements, enabling higher component density in portable and space-limited applications.
- Industrial Temperature Support: Extended -40°C to 85°C operation range allows deployment in harsh environments without additional thermal management.
- Standard Voltage Rails: Operating from 3V to 3.6V aligns with common embedded system power supplies, reducing BOM cost and design complexity.
- Fast Response Times: With 5ns access and 2ns write cycle times, the device supports real-time processing demands in control and instrumentation applications.
Why Choose AS4C8M16S-6BIN?
The AS4C8M16S-6BIN is positioned for embedded system designers requiring reliable parallel SDRAM in a compact form factor with industrial temperature tolerance. This device fits designs where proven synchronous memory architecture, fast access times, and extended environmental ratings are essential. The combination of 166 MHz operation, 54-pin TFBGA packaging, and wide temperature support makes this SDRAM appropriate for industrial automation, legacy system support, and embedded applications demanding predictable performance.
While this component carries an obsolete lifecycle status, it remains relevant for production sustaining, repair operations, and designs requiring continuity with established parallel SDRAM architectures. The standard 3.3V operation and synchronous interface ensure compatibility with existing embedded platforms.
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Contact our technical sales team for pricing, availability, and volume discounts on the AS4C8M16S-6BIN. Our applications engineers can assist with integration guidance, timing analysis, and lifecycle planning to support your project requirements.