AS4C8M16S-6TCN

The AS4C8M16S-6TCN is a 128-megabit synchronous dynamic random access memory (SDRAM) organized as 8M x 16 bits. This parallel interface DRAM operates at clock frequencies up to 166 MHz, delivering fast read and write performance for applications requiring high-speed volatile memory.

With a 5ns access time and 2ns write cycle time, this SDRAM provides responsive data storage for embedded systems, computing platforms, and communication equipment operating in commercial temperature environments.

Key Features

• Memory Architecture - 128Mbit capacity organized as 8M x 16-bit configuration provides flexible data width for 16-bit bus applications.
• High-Speed Operation - 166 MHz clock frequency with 5ns access time and 2ns write cycle time enables fast data throughput for time-sensitive operations.
• Synchronous Interface - SDRAM technology with parallel interface simplifies timing requirements and integration with synchronous system buses.
• Standard Voltage Supply - 3V to 3.6V operating range compatible with common 3.3V logic families reduces power supply complexity.
• Commercial Temperature Range - 0°C to 70°C operating range suited for indoor commercial and consumer applications.
• Compact Packaging - 54-pin TSOP II package with 10.16mm width offers space-efficient surface mount footprint.

Typical Applications

• Consumer Electronics - This SDRAM serves as main memory in set-top boxes and digital media players where 128Mbit capacity supports buffering and caching for multimedia processing.
• Communication Equipment - The parallel interface provides data buffering for routers and switches where 166 MHz operation keeps pace with packet processing requirements.
• Embedded Computing - This memory supports microcontroller and DSP systems where synchronous operation simplifies integration with processor buses and reduces timing complexity.
• Test and Measurement - The 8M x 16 organization provides waveform storage and data acquisition buffering where fast access times enable high sample rate captures.

Unique Advantages

• Proven SDRAM Architecture: Synchronous DRAM technology with standardized command interface simplifies design migration and reduces development risk.
• Cost-Effective Capacity: 128Mbit density provides sufficient memory for many embedded applications at competitive price points compared to higher-density alternatives.
• Wide Voltage Tolerance: 3V to 3.6V supply range accommodates variations in 3.3V power rails without additional regulation.
• Standard Package: 54-pin TSOP II is an industry-standard footprint with broad pick-and-place compatibility and established PCB layout practices.
• Parallel Interface Simplicity: Direct parallel bus connection eliminates protocol overhead and serializer/deserializer complexity required by serial memories.

Why Choose AS4C8M16S-6TCN?

This SDRAM delivers a balanced combination of capacity, speed, and interface simplicity for commercial embedded applications. The synchronous architecture and parallel interface make it straightforward to integrate with common microprocessors and FPGAs that support standard SDRAM timing protocols. For designs requiring 128Mbit of fast volatile memory with a proven, mature technology, this component offers reliable performance in the 0°C to 70°C commercial temperature range.

Note: This product has an Obsolete lifecycle status. Designers should verify current availability and consider long-term supply planning when incorporating this component into new designs.

Get a Quote

Contact our sales team to discuss availability, pricing, and technical support for the AS4C8M16S-6TCN. Our application engineers can help you evaluate this SDRAM for your specific memory requirements and provide guidance on integration and PCB layout considerations.