EN25QE80A-104IP(2P)
| Part Description |
8 Mbit SPI NOR Flash (Industrial) |
|---|---|
| Quantity | 608 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | N/A | Memory Format | NOR Flash | Technology | SPI NOR Flash | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 8 Mbit | Access Time | 8 ns | Grade | Industrial | ||
| Clock Frequency | 104 MHz | Voltage | 2.5V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 4 ms | Packaging | N/A | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 1M x 8 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of EN25QE80A-104IP(2P) – 8 Mbit SPI NOR Flash (Industrial)
The EN25QE80A-104IP(2P) is an 8 Mbit serial SPI NOR Flash memory device optimized for embedded and industrial use. It provides a serial interface architecture with Standard, Dual and Quad SPI modes and a high-speed 104 MHz clock for fast read performance.
Designed for code and data storage where granular protection and in-field updates are required, the device combines uniform 4-Kbyte sectors, flexible erase/program operations and hardware/software write-protection to support firmware patching and secure data segments in industrial embedded systems.
Key Features
- Memory Capacity and Organization — 8 Mbit (1024 KByte) organized as 1M × 8 with 4096 pages and 256 bytes per programmable page, enabling byte-to-page programming granularity.
- Serial SPI Interface — Supports Standard, Dual and Quad SPI (CLK, CS#, DI/DO, DQ lines) with configurable dummy cycles for flexible timing and throughput tuning.
- High-Speed Operation — 104 MHz clock rate supported for Standard, Dual and Quad SPI operation to maximize read throughput.
- Power and Voltage — Single-supply operation across a full voltage range of 2.3–3.6 V for broad system compatibility and 2.5 V listed as supply reference in device specifications.
- Program / Erase Performance — Typical page program time 1 ms; sector erase time ~100 ms, half-block erase ~300 ms, block erase ~500 ms and chip erase ~8 s (typical timings reported in device datasheet).
- Uniform Sector Architecture — 256 × 4-Kbyte sectors, 32 × 32-Kbyte blocks and 16 × 64-Kbyte blocks allow individual sector/block erase and targeted updates without full chip erase.
- Write Protection and Security — Software and hardware write-protect mechanisms including WP# pin, volatile status register bits and a lockable 3 × 1024-byte OTP security sector.
- Low Power — Typical active current ~10 mA and power-down current ~1 μA for energy-conscious designs.
- Reliability — Minimum 100K program/erase cycles per sector and 20 years data retention specified for long-term storage integrity.
- Package and Mounting — Available in multiple Pb-free packages including 8-pin SOP (150 mil and 200 mil) and 8-contact USON (3 × 2 × 0.45 mm); surface-mount mounting supports automated assembly.
- Industrial Temperature Range — Rated for −40 °C to 85 °C operation suitable for industrial environments.
Typical Applications
- Firmware and Boot Code Storage — Reliable non-volatile storage for system firmware with sector/block erase granularity for selective updates.
- Field Upgradeable Embedded Systems — Supports in-field code patching and module-based updates via per-block protection and program/erase controls.
- Configuration and Parameter Storage — Small non-volatile storage segments and a lockable OTP area for secure device configuration or unique identifiers.
Unique Advantages
- Flexible SPI Modes: Standard, Dual and Quad SPI support enables designers to trade off pins and throughput according to system needs.
- High Read Throughput: 104 MHz clock operation for Standard/Dual/Quad modes provides fast read performance for code execution-in-place or bulk data reads.
- Granular Erase Architecture: 4-Kbyte uniform sectors and multiple block sizes allow targeted erase and program operations, minimizing update scope and downtime.
- Robust Protection: Combined software and hardware write-protect features plus a lockable OTP sector protect critical code and data segments.
- Industrial Reliability: Specified 100K program/erase endurance and 20-year data retention, along with −40 °C to 85 °C rating, support long-life industrial deployments.
- Low Power Operation: Typical active and power-down currents enable power-efficient designs where standby and active energy use matter.
Why Choose EN25QE80A-104IP(2P)?
The EN25QE80A-104IP(2P) positions itself as a practical, high-performance SPI NOR Flash option for industrial embedded designs that require reliable non-volatile storage, flexible update mechanisms and multiple SPI throughput modes. Its combination of high-speed 104 MHz operation, fine-grained erase architecture and robust protection features make it well suited for systems that must support secure firmware updates and long-term data retention.
With industrial temperature rating, multiple Pb-free package options and clearly specified program/erase and power characteristics, this device supports scalable, durable designs where long-term reliability and controlled update behavior are important.
Request a quote or submit your requirements to receive pricing and availability for EN25QE80A-104IP(2P).
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
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