EN25QE80A-104IP(2P)

8Mb SPI NOR Flash Ind.
Part Description

8 Mbit SPI NOR Flash (Industrial)

Quantity 608 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageN/AMemory FormatNOR FlashTechnologySPI NOR Flash
Memory Size8 MbitAccess Time8 nsGradeIndustrial
Clock Frequency104 MHzVoltage2.5VMemory TypeNon-Volatile
Operating Temperature-40°C – 85°CWrite Cycle Time Word Page4 msPackagingN/A
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization1M x 8
Moisture Sensitivity LevelN/ARoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.00.71

Overview of EN25QE80A-104IP(2P) – 8 Mbit SPI NOR Flash (Industrial)

The EN25QE80A-104IP(2P) is an 8 Mbit serial SPI NOR Flash memory device optimized for embedded and industrial use. It provides a serial interface architecture with Standard, Dual and Quad SPI modes and a high-speed 104 MHz clock for fast read performance.

Designed for code and data storage where granular protection and in-field updates are required, the device combines uniform 4-Kbyte sectors, flexible erase/program operations and hardware/software write-protection to support firmware patching and secure data segments in industrial embedded systems.

Key Features

  • Memory Capacity and Organization — 8 Mbit (1024 KByte) organized as 1M × 8 with 4096 pages and 256 bytes per programmable page, enabling byte-to-page programming granularity.
  • Serial SPI Interface — Supports Standard, Dual and Quad SPI (CLK, CS#, DI/DO, DQ lines) with configurable dummy cycles for flexible timing and throughput tuning.
  • High-Speed Operation — 104 MHz clock rate supported for Standard, Dual and Quad SPI operation to maximize read throughput.
  • Power and Voltage — Single-supply operation across a full voltage range of 2.3–3.6 V for broad system compatibility and 2.5 V listed as supply reference in device specifications.
  • Program / Erase Performance — Typical page program time 1 ms; sector erase time ~100 ms, half-block erase ~300 ms, block erase ~500 ms and chip erase ~8 s (typical timings reported in device datasheet).
  • Uniform Sector Architecture — 256 × 4-Kbyte sectors, 32 × 32-Kbyte blocks and 16 × 64-Kbyte blocks allow individual sector/block erase and targeted updates without full chip erase.
  • Write Protection and Security — Software and hardware write-protect mechanisms including WP# pin, volatile status register bits and a lockable 3 × 1024-byte OTP security sector.
  • Low Power — Typical active current ~10 mA and power-down current ~1 μA for energy-conscious designs.
  • Reliability — Minimum 100K program/erase cycles per sector and 20 years data retention specified for long-term storage integrity.
  • Package and Mounting — Available in multiple Pb-free packages including 8-pin SOP (150 mil and 200 mil) and 8-contact USON (3 × 2 × 0.45 mm); surface-mount mounting supports automated assembly.
  • Industrial Temperature Range — Rated for −40 °C to 85 °C operation suitable for industrial environments.

Typical Applications

  • Firmware and Boot Code Storage — Reliable non-volatile storage for system firmware with sector/block erase granularity for selective updates.
  • Field Upgradeable Embedded Systems — Supports in-field code patching and module-based updates via per-block protection and program/erase controls.
  • Configuration and Parameter Storage — Small non-volatile storage segments and a lockable OTP area for secure device configuration or unique identifiers.

Unique Advantages

  • Flexible SPI Modes: Standard, Dual and Quad SPI support enables designers to trade off pins and throughput according to system needs.
  • High Read Throughput: 104 MHz clock operation for Standard/Dual/Quad modes provides fast read performance for code execution-in-place or bulk data reads.
  • Granular Erase Architecture: 4-Kbyte uniform sectors and multiple block sizes allow targeted erase and program operations, minimizing update scope and downtime.
  • Robust Protection: Combined software and hardware write-protect features plus a lockable OTP sector protect critical code and data segments.
  • Industrial Reliability: Specified 100K program/erase endurance and 20-year data retention, along with −40 °C to 85 °C rating, support long-life industrial deployments.
  • Low Power Operation: Typical active and power-down currents enable power-efficient designs where standby and active energy use matter.

Why Choose EN25QE80A-104IP(2P)?

The EN25QE80A-104IP(2P) positions itself as a practical, high-performance SPI NOR Flash option for industrial embedded designs that require reliable non-volatile storage, flexible update mechanisms and multiple SPI throughput modes. Its combination of high-speed 104 MHz operation, fine-grained erase architecture and robust protection features make it well suited for systems that must support secure firmware updates and long-term data retention.

With industrial temperature rating, multiple Pb-free package options and clearly specified program/erase and power characteristics, this device supports scalable, durable designs where long-term reliability and controlled update behavior are important.

Request a quote or submit your requirements to receive pricing and availability for EN25QE80A-104IP(2P).

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