EN25QW32A-104WIAP(2P)

The EN25QW32A-104WIAP(2P) is a 32 M-bit serial NOR Flash memory device with a full wide-voltage range and a standard SPI-compatible serial interface. It implements Serial, Dual and Quad SPI modes and offers a uniform 4-Kbyte sector architecture for flexible, granular erase and program operations.

Engineered for embedded and industrial designs — and qualified to AEC-Q100 — this part provides high-speed serial access, low-power standby, and package options suitable for compact surface-mount applications across industrial and automotive markets.

Key Features

• Memory Core 32 M-bit serial NOR Flash organized as 4M × 8 with 4,096 KByte total capacity and 256-byte programmable page size.
• Interface & Performance SPI-compatible serial interface supporting Standard, Dual and Quad SPI modes with a 104 MHz clock rate for Standard, two-bit and four-bit transfers. Access time is specified at 12 ns.
• Power & Timing Single-supply operation across a wide voltage range of 1.65 V to 3.6 V. Typical active current is 14 mA and typical power-down current is 1 µA.
• Program / Erase Performance Typical page program time 1.2 ms; typical sector erase time 150 ms; half-block and block erase times of 500 ms and 700 ms respectively; full chip erase typical 35 s.
• Sector and Block Architecture Uniform 4-Kbyte sectors (1,024 sectors), 128 blocks of 32-Kbyte and 64 blocks of 64-Kbyte allow individual sector or block erase operations.
• Protection & Security Software and hardware write protection with WP# pin support, lockable 3 × 1,024-byte OTP security sector, and support for Serial Flash Discoverable Parameters (SFDP) and Unique ID read.
• Reliability Minimum 100K program/erase cycles per sector and typical data retention of 20 years.
• Package & Temperature Available in an 8-contact VDFN/WSON (6×5 mm) surface-mount package; industrial operating temperature range −40°C to +105°C. Device is AEC-Q100 qualified.

Typical Applications

• Embedded Firmware Storage Store firmware, configuration and lookup tables with granular 4-Kbyte sectors and page-program support for efficient code and data updates.
• Industrial Control Non-volatile storage for control algorithms, parameter tables and field updates where wide voltage operation and industrial temperature range are required.
• Automotive Electronics Suitable for automotive modules that require AEC-Q100 qualified Flash memory with low standby current and robust program/erase endurance.
• Consumer & IoT Devices Compact VDFN/WSON packaging and low-power modes make the device useful for embedded consumer and IoT products needing reliable non-volatile storage.

Unique Advantages

• Wide Voltage Flexibility: Operates across 1.65–3.6 V to simplify integration with systems using different supply rails.
• High-Speed Serial Access: 104 MHz clock support for Standard, Dual and Quad SPI modes accelerates read throughput for code and data access.
• Granular Memory Management: 4-Kbyte uniform sector architecture enables precise, minimal-erase updates and reduces wear on other sectors.
• Low Power Standby: Typical 1 µA power-down current preserves battery life in low-power or standby applications.
• Automotive-Grade Qualification: AEC-Q100 qualification and −40°C to +105°C operation support deployment in automotive and industrial environments.
• Security & Protection Features: Hardware/software write-protect capability and a lockable OTP sector help safeguard critical code and data.

Why Choose EN25QW32A-104WIAP(2P)?

The EN25QW32A-104WIAP(2P) combines wide-voltage operation, high-speed SPI access and a compact VDFN/WSON footprint with industrial temperature capability and AEC-Q100 qualification. Its uniform 4-Kbyte sector architecture, proven program/erase performance and low-power standby characteristics make it a practical choice for embedded, industrial and automotive designs requiring reliable non-volatile storage.

Designers seeking a versatile serial NOR Flash device for firmware and data storage will benefit from the device’s configurable SPI modes, sector-level protection, and long-term data retention and endurance characteristics — providing a robust, compact memory option for constrained PCB real estate and demanding environments.

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