EN25SY256A-104HIP(2P)
| Part Description |
256 Mbit SPI NOR Flash (Industrial, 104 MHz) |
|---|---|
| Quantity | 1,140 Available (as of May 6, 2026) |
Specifications & Environmental
| Device Package | 8-pin SOP 200mil | Memory Format | NOR Flash | Technology | SPI NOR Flash | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 8 ns | Grade | Industrial | ||
| Clock Frequency | 104 MHz | Voltage | 2.5V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 3 ms | Packaging | 8-pin SOP 200mil | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 32M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of EN25SY256A-104HIP(2P) – 256 Mbit SPI NOR Flash (Industrial, 104 MHz)
The EN25SY256A-104HIP(2P) from ESMT is a 256 Mbit Serial NOR Flash memory device in the EON™ EN25SY256A series. It implements a SPI serial interface with support for single, dual and quad I/O, and offers uniform 4 Kbyte sectors with flexible program and erase options.
Designed for industrial-grade applications, this device delivers high-speed read performance (up to 104 MHz for Single/Dual/Quad I/O fast read and up to 133 MHz for Quad I/O fast read), low active and standby currents, and robust program/erase endurance—making it suitable for embedded code and data storage in temperature-critical environments.
Key Features
- Memory Capacity & Organization — 256 M-bit capacity organized as 32M × 8 with 131,072 pages and 256 bytes per programmable page.
- Serial SPI Architecture — SPI compatible (Mode 0 and Mode 3) with Standard, Dual and Quad SPI command sets and configurable dummy cycles for flexible read timing.
- High-Speed Read — 104 MHz clock rate for Single/Dual/Quad I/O Fast Read; 133 MHz clock rate for Quad I/O Fast Read.
- Uniform Sector Architecture — 8,192 sectors of 4 Kbyte each, plus larger block granularities (1,024 × 32 Kbyte, 512 × 64 Kbyte) for targeted erase and update.
- Program & Erase Performance — Typical page program time 0.5 ms; typical sector erase 40 ms; half-block 200 ms; block erase 300 ms; chip erase 120 s (typical).
- Endurance & Retention — Minimum 100K program/erase cycles per sector or block and typical data retention of 20 years.
- Write Protection & Security — Software and hardware write protection with WP# pin; lockable 3 × 512-byte OTP security sector; support for Read Unique ID and SFDP signature.
- Low Power — Typical active current ~7 mA and typical power-down current ~1 μA for energy-conscious embedded systems.
- Voltage & Addressing — Single power supply operation with full voltage range 1.65–1.95 V and support for 3-byte and 4-byte addressing modes.
- Package & Temperature — Available in 8-pin SOP 200 mil and other package options; surface-mount mounting; industrial temperature range (−40 °C to 85 °C).
- Compliance — All Pb-free packages are RoHS compliant.
Typical Applications
- Embedded Firmware Storage — Non-volatile code storage and boot code for microcontroller-based designs requiring fast read access and in-field updates.
- Industrial Control — Reliable program and data storage for industrial controllers and instrumentation across the −40 °C to 85 °C operating range.
- Field Upgradeable Systems — Sector-level erase and program capability combined with software/hardware protection enables safe firmware patching and over-the-air update storage.
Unique Advantages
- Flexible I/O Modes: Single, Dual and Quad SPI support lets designers scale throughput without redesigning board-level interfaces.
- Granular Memory Management: 4 Kbyte uniform sectors and multiple block sizes allow precise erase/update operations, minimizing wear and accelerating updates.
- High Read Performance: Fast read clock rates (104 MHz / 133 MHz) reduce boot and data-access latency for performance-sensitive applications.
- Robust Endurance and Retention: 100K program/erase cycles and 20-year data retention provide long-term reliability for deployed systems.
- Power-Efficient Operation: Low active and power-down currents help extend battery life in portable and remote devices.
- Industrial-Grade Temperature Range: −40 °C to 85 °C rating supports demanding environmental conditions.
Why Choose EN25SY256A-104HIP(2P)?
The EN25SY256A-104HIP(2P) positions itself as a high-performance, industrial-grade serial NOR Flash device that balances fast read throughput with low power operation and long-term data integrity. Its flexible SPI modes, granular sector architecture, and hardware/software protection features make it a practical choice for embedded designers and OEMs who require predictable program/erase behavior and support for in-field firmware management.
This device is well suited to designs that demand reliable non-volatile storage across a wide temperature range, straightforward integration into SPI-based systems, and proven endurance and retention characteristics for long-life deployments.
Request a quote or submit an inquiry to source EN25SY256A-104HIP(2P) for your next design or production run.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A