EN25SY256A-104HIP(2P)

256Mb SPI NOR Flash Ind.
Part Description

256 Mbit SPI NOR Flash (Industrial, 104 MHz)

Quantity 1,140 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package8-pin SOP 200milMemory FormatNOR FlashTechnologySPI NOR Flash
Memory Size256 MbitAccess Time8 nsGradeIndustrial
Clock Frequency104 MHzVoltage2.5VMemory TypeNon-Volatile
Operating Temperature-40°C – 85°CWrite Cycle Time Word Page3 msPackaging8-pin SOP 200mil
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization32M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.00.71

Overview of EN25SY256A-104HIP(2P) – 256 Mbit SPI NOR Flash (Industrial, 104 MHz)

The EN25SY256A-104HIP(2P) from ESMT is a 256 Mbit Serial NOR Flash memory device in the EON™ EN25SY256A series. It implements a SPI serial interface with support for single, dual and quad I/O, and offers uniform 4 Kbyte sectors with flexible program and erase options.

Designed for industrial-grade applications, this device delivers high-speed read performance (up to 104 MHz for Single/Dual/Quad I/O fast read and up to 133 MHz for Quad I/O fast read), low active and standby currents, and robust program/erase endurance—making it suitable for embedded code and data storage in temperature-critical environments.

Key Features

  • Memory Capacity & Organization — 256 M-bit capacity organized as 32M × 8 with 131,072 pages and 256 bytes per programmable page.
  • Serial SPI Architecture — SPI compatible (Mode 0 and Mode 3) with Standard, Dual and Quad SPI command sets and configurable dummy cycles for flexible read timing.
  • High-Speed Read — 104 MHz clock rate for Single/Dual/Quad I/O Fast Read; 133 MHz clock rate for Quad I/O Fast Read.
  • Uniform Sector Architecture — 8,192 sectors of 4 Kbyte each, plus larger block granularities (1,024 × 32 Kbyte, 512 × 64 Kbyte) for targeted erase and update.
  • Program & Erase Performance — Typical page program time 0.5 ms; typical sector erase 40 ms; half-block 200 ms; block erase 300 ms; chip erase 120 s (typical).
  • Endurance & Retention — Minimum 100K program/erase cycles per sector or block and typical data retention of 20 years.
  • Write Protection & Security — Software and hardware write protection with WP# pin; lockable 3 × 512-byte OTP security sector; support for Read Unique ID and SFDP signature.
  • Low Power — Typical active current ~7 mA and typical power-down current ~1 μA for energy-conscious embedded systems.
  • Voltage & Addressing — Single power supply operation with full voltage range 1.65–1.95 V and support for 3-byte and 4-byte addressing modes.
  • Package & Temperature — Available in 8-pin SOP 200 mil and other package options; surface-mount mounting; industrial temperature range (−40 °C to 85 °C).
  • Compliance — All Pb-free packages are RoHS compliant.

Typical Applications

  • Embedded Firmware Storage — Non-volatile code storage and boot code for microcontroller-based designs requiring fast read access and in-field updates.
  • Industrial Control — Reliable program and data storage for industrial controllers and instrumentation across the −40 °C to 85 °C operating range.
  • Field Upgradeable Systems — Sector-level erase and program capability combined with software/hardware protection enables safe firmware patching and over-the-air update storage.

Unique Advantages

  • Flexible I/O Modes: Single, Dual and Quad SPI support lets designers scale throughput without redesigning board-level interfaces.
  • Granular Memory Management: 4 Kbyte uniform sectors and multiple block sizes allow precise erase/update operations, minimizing wear and accelerating updates.
  • High Read Performance: Fast read clock rates (104 MHz / 133 MHz) reduce boot and data-access latency for performance-sensitive applications.
  • Robust Endurance and Retention: 100K program/erase cycles and 20-year data retention provide long-term reliability for deployed systems.
  • Power-Efficient Operation: Low active and power-down currents help extend battery life in portable and remote devices.
  • Industrial-Grade Temperature Range: −40 °C to 85 °C rating supports demanding environmental conditions.

Why Choose EN25SY256A-104HIP(2P)?

The EN25SY256A-104HIP(2P) positions itself as a high-performance, industrial-grade serial NOR Flash device that balances fast read throughput with low power operation and long-term data integrity. Its flexible SPI modes, granular sector architecture, and hardware/software protection features make it a practical choice for embedded designers and OEMs who require predictable program/erase behavior and support for in-field firmware management.

This device is well suited to designs that demand reliable non-volatile storage across a wide temperature range, straightforward integration into SPI-based systems, and proven endurance and retention characteristics for long-life deployments.

Request a quote or submit an inquiry to source EN25SY256A-104HIP(2P) for your next design or production run.

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