EN29LV160DB-70BIP2W

16Mb Parallel NOR Flash Ind.
Part Description

16Mbit Parallel NOR Flash, 3.0V, 70ns, Bottom Boot, Industrial

Quantity 634 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package48-TFBGA (6x8mm)Memory FormatFLASHTechnologyNOR Flash
Memory Size16 MbitAccess Time70 nsGradeIndustrial
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C – 85°CWrite Cycle Time Word Page8 µsPackaging48-TFBGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization2M x 8 / 1M x 16
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.00.71

Overview of EN29LV160DB-70BIP2W – 16Mbit Parallel NOR Flash, 3.0V, 70ns, Bottom Boot, Industrial

The EN29LV160DB-70BIP2W is a 16‑Megabit (2,097,152 bytes / 1,048,576 words) parallel NOR Flash memory device with bottom-boot capability, available in a 48-ball TFBGA (6 × 8 mm) package. It is a boot sector flash memory optimized for 3.0V single-supply operation with access times as fast as 70 ns and industrial temperature range.

Designed for embedded and industrial applications that require non-volatile code and data storage, this device combines fast read performance, flexible sector architecture and on-chip protection features to support firmware, boot code and field updates in reliable systems.

Key Features

  • Memory Organization — 16 Mbit capacity organized as 2,048K × 8 or 1,024K × 16, matching common parallel bus configurations for firmware and code storage.
  • Boot Sector Architecture — Boot sector flash memory with one secured silicon sector (128‑word area) that can be permanently protected to safeguard critical code or data.
  • Flexible Sector Layout — Multiple sector sizes (one 16 KB, two 8 KB, one 32 KB, thirty-one 64 KB in byte mode) for targeted program/erase operations and efficient field updates.
  • High Performance — Fast access times down to 70 ns reduce CPU wait states; typical byte/word program time is 8 µs for responsive in-system programming.
  • Program/Erase and Control — Supports single-sector and full-chip erase, sector unprotect mode, embedded erase/program algorithms, and JEDEC standard program/erase commands with DATA# polling and toggle bits.
  • Power and Current — 3.0V single-supply operation with typical active read current of 9 mA, typical program/erase current of 20 mA, and less than 1 µA standby/automatic sleep current.
  • Reliability — Minimum 100K program/erase cycles per sector and 20 years data retention specified for long-term firmware reliability.
  • Erase Suspend / Resume — Allows read or program operations in another sector during an erase suspend window for greater system flexibility.
  • Package & Temperature — 48-ball TFBGA (6 × 8 mm) surface-mount package rated for industrial operating temperature range of −40 °C to 85 °C.
  • Standards Support — JEDEC Common Flash Interface (CFI) support for system-level compatibility and predictable behavior.

Typical Applications

  • Industrial Control — Non-volatile storage of firmware and boot code in industrial controllers and automation equipment operating across −40 °C to 85 °C.
  • Embedded Systems — Code and data storage for embedded processors requiring parallel NOR Flash with fast access times and sector-level protection.
  • Boot Code Storage — Bottom-boot architecture and secured silicon sector enable reliable bootloader storage and protection for system startup code.
  • Field Upgrades / In-System Programming — Fast program/erase performance and sector unprotect modes support in-field firmware updates and incremental code changes.

Unique Advantages

  • Fast, Wait‑State‑Free Reads: 70 ns access time minimizes CPU wait states for improved system responsiveness.
  • Low Standby Power: Less than 1 µA in standby or automatic sleep mode reduces system standby power draw in battery-backed or low-power systems.
  • Granular Sector Control: Flexible sector architecture and hardware sector locking provide targeted program/erase operations and secure protection for critical regions.
  • Robust Endurance and Retention: Specified minimum 100K program/erase cycles and 20 years data retention support long product life cycles and field reliability.
  • Industrial Grade Packaging: 48‑ball TFBGA (6 × 8 mm) and industrial temperature rating enable deployment in space-constrained, harsh-environment systems.
  • Operational Flexibility: Erase suspend/resume and JEDEC CFI support allow flexible integration with existing system designs and debug workflows.

Why Choose EN29LV160DB-70BIP2W?

The EN29LV160DB-70BIP2W positions itself as a high-performance, industrial-grade NOR Flash device tailored for embedded systems that require reliable boot storage, fast read performance and flexible sector-level control. With a compact 48‑ball TFBGA package, low standby current, and proven program/erase endurance, it is suited for applications where long-term data retention and rugged operation are important.

Engineers designing industrial controllers, embedded firmware platforms or devices requiring secure boot regions will find the EN29LV160DB-70BIP2W combines performance, protection and power efficiency with JEDEC-standard command compatibility to simplify system integration.

Request a quote or submit a purchase inquiry to evaluate the EN29LV160DB-70BIP2W for your next embedded or industrial design.

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