EN29LV160DT-70BIP2W

16Mb Parallel NOR Flash Ind.
Part Description

16Mbit Parallel NOR Flash, 3.0V, 70ns, Top Boot, 48-TFBGA (Industrial)

Quantity 153 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package48-TFBGA (6x8mm)Memory FormatFLASHTechnologyNOR Flash
Memory Size16 MbitAccess Time70 nsGradeIndustrial
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C – 85°CWrite Cycle Time Word Page8 µsPackaging48-TFBGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization2M x 8 / 1M x 16
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.00.71

Overview of EN29LV160DT-70BIP2W – 16Mbit Parallel NOR Flash, 3.0V, 70ns, Top Boot, 48-TFBGA (Industrial)

The EN29LV160DT-70BIP2W is a 16‑Megabit parallel NOR Flash memory from ESMT designed for industrial embedded systems and boot/firmware storage. It is a Top Boot sector Flash device that operates from a single 3.0V supply (2.7V–3.6V) and delivers fast, byte/word-programmable non‑volatile storage with access times as fast as 70 ns.

Optimized for system-level firmware and code storage, the device combines sector-level protection, secure silicon sector options and JEDEC-standard command support to simplify firmware management and in-field updates in temperature‑sensitive industrial environments.

Key Features

  • Memory Capacity & Organization — 16 Megabit organized as 2,097,152 bytes (2M × 8) or 1,048,576 words (1M × 16), giving flexible data width options for parallel bus designs.
  • High Performance — 70 ns maximum access time to minimize processor wait states and support high‑performance microprocessor systems.
  • Program & Erase Speed — Typical byte/word program time 8 µs, sector erase ~100 ms typical, chip erase ~4 s typical for efficient in‑field updates.
  • Power — Single 3.0V operation (2.7V–3.6V); typical active read 9 mA, typical program/erase 20 mA, and standby/automatic sleep current < 1 µA for low system power impact.
  • Flexible Sector Architecture — Mixed sector map (one 16 Kbyte, two 8 Kbyte, one 32 Kbyte and thirty‑one 64 Kbyte sectors in byte mode) enabling targeted updates and minimal erase overhead.
  • Sector Protection & Security — Hardware locking of sectors, temporary Sector Group Unprotect for controlled updates, and a Secured Silicon Sector (128‑word area) that can be permanently protected.
  • Reliability & Endurance — Minimum 100K program/erase cycles per sector and 20 years data retention documented in the datasheet.
  • Standards & Features — JEDEC standard program/erase commands, DATA# polling and toggle bit features, JEDEC Common Flash Interface (CFI) support, low VCC write inhibit ≤ 2.5V, and erase suspend/resume capability.
  • Industrial Grade Packaging & Temperature — 48‑ball TFBGA package (6 × 8 mm) and industrial operating range −40 °C to 85 °C.

Typical Applications

  • Industrial Embedded Systems — Reliable non‑volatile code and configuration storage for controllers, PLCs and industrial instrumentation operating across −40 °C to 85 °C.
  • Boot and Firmware Storage — Top Boot sector architecture and fast 70 ns access time make the device suited for system boot ROM and firmware execution in microprocessor systems.
  • Field Upgrade and In‑System Programming — Sector protection, temporary unprotect and erase suspend/resume enable secure, targeted firmware updates without full system downtime.
  • Secure Code Storage — Secured Silicon Sector provides a permanently protectable 128‑word region for critical code or data.

Unique Advantages

  • Fast System Integration — 70 ns access time and parallel interface reduce the need for wait states and simplify integration with high‑performance processors.
  • Granular Update Control — Mixed sector sizes and sector locking allow targeted erases/programs, minimizing erase overhead and preserving device endurance.
  • Low Power Impact — Single 3.0V supply with low active and standby currents helps keep overall system power consumption low in both active and sleep modes.
  • Robust Data Retention and Endurance — Minimum 100K program/erase cycles and 20 years data retention provide long‑term reliability for deployed systems.
  • Standards Compatibility — JEDEC program/erase commands, DATA# polling, toggle bit features and CFI support streamline software development and interoperability.
  • Industrial Temperature Range — Specified operation from −40 °C to 85 °C for use in a wide range of industrial environments.

Why Choose EN29LV160DT-70BIP2W?

The EN29LV160DT-70BIP2W positions itself as a reliable, performance‑oriented parallel NOR Flash solution for industrial embedded designs where fast boot, secure code storage and field update capability are required. With industry‑grade temperature support, flexible sector architecture and JEDEC‑compliant command support, it is well suited to embedded applications that need deterministic read performance and controlled in‑system programming.

Available in a compact 48‑ball TFBGA (6 × 8 mm) package and backed by ESMT's documented endurance and retention figures, this device supports long product lifecycles and scalable firmware management strategies for industrial equipment and embedded controllers.

Request a quote or submit a pricing inquiry to obtain availability, lead times and volume pricing for EN29LV160DT-70BIP2W.

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