EN35QX512A-104HIP(2S)

512Mb SPI NOR Flash Ind.
Part Description

512 Mbit SPI NOR Flash, Industrial, 8‑pin SOP

Quantity 409 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package8-pin SOP 200milMemory FormatDRAMTechnologySPI NOR Flash
Memory Size512 MbitAccess Time8 nsGradeIndustrial
Clock Frequency104 MHzVoltage2.5VMemory TypeNon-Volatile
Operating Temperature-40°C – 85°CWrite Cycle Time Word Page500 µsPackaging8-pin SOP 200mil
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization64M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.00.71

Overview of EN35QX512A-104HIP(2S) – 512 Mbit SPI NOR Flash, Industrial, 8‑pin SOP

The EN35QX512A-104HIP(2S) is a 512 Mbit serial SPI NOR flash memory from ESMT designed for industrial-temperature systems. It provides high-density non‑volatile storage with standard, dual and quad SPI I/O modes and flexible sector/block erase options for code and data management.

With support for fast read clock rates, uniform 4-Kbyte sector architecture and hardware/software write protection, this device is targeted at embedded systems that require reliable firmware storage, field updates and long data retention under -40 °C to 85 °C operating conditions.

Key Features

  • Memory & Capacity — 512 Mbit total capacity organized as 64M × 8 (65,536 KByte), with 262,144 pages and 256 bytes per programmable page.
  • Sector & Block Architecture — Uniform sector architecture with 16,384 × 4‑Kbyte sectors, 2,048 × 32‑Kbyte blocks and 1,024 × 64‑Kbyte blocks; any sector or block can be erased individually.
  • Interface & Performance — SPI compatible in Standard, Dual or Quad I/O modes; 104 MHz clock rate for Single/Dual/Quad I/O fast read and up to 133 MHz for Quad I/O fast read (device series specification).
  • Program & Erase Speed — Page program time typically 0.5 ms (500 µs); sector erase typically 40 ms; half‑block and block erase and full chip erase times available per device specifications.
  • Power & Voltage — Single‑supply operation over 2.7–3.6 V full voltage range; low power consumption with typical active current ≈14 mA and typical power‑down current ≈2 µA.
  • Reliability & Retention — Minimum 100K program/erase cycles per sector and typical data retention of 20 years.
  • Security & Protection — Software and hardware write protection, WP# pin and HOLD# pin support, lockable 3 × 512‑byte One‑Time Programmable (OTP) security sector, and volatile status register bits for protection control.
  • Addressing & Standards — Supports 3‑byte and 4‑byte address modes and Serial Flash Discoverable Parameters (SFDP) signature; includes Read Unique ID command.
  • Package & Temperature — Industrial‑grade device available in 8‑pin SOP (200 mil) package; operating temperature range −40 °C to 85 °C; surface‑mount mounting.
  • Compliance — Pb‑free packages compliant with RoHS and related environmental directives.

Typical Applications

  • Embedded Firmware Storage — Store and update bootloaders, firmware images and configuration data with sector‑level erase and write‑protect features for safe in‑field updates.
  • Industrial Control Systems — Non‑volatile code and parameter storage for controllers and instrumentation operating across −40 °C to 85 °C.
  • Consumer & IoT Devices — High‑density code and data storage for devices that require low power standby and fast SPI read performance.
  • Secure ID & Configuration — Use the lockable OTP region and unique ID for device configuration, authentication tokens or calibration data.

Unique Advantages

  • High Density in Compact Packages — 512 Mbit capacity in an 8‑pin SOP 200 mil package simplifies BOM and board area for space‑constrained designs.
  • Flexible SPI Modes — Standard, Dual and Quad I/O support enables designers to scale throughput to match system performance targets.
  • Fine‑Grained Erase and Protection — 4‑Kbyte uniform sectors and multiple protection mechanisms enable safe partial updates without exposing other code regions.
  • Industrial Temperature Range — Specified −40 °C to 85 °C operation makes the device suitable for a wide range of industrial embedded applications.
  • Proven Program/Erase Endurance and Retention — Minimum 100K cycles and 20‑year data retention provide long term reliability for stored code and key data.
  • Low Power Standby — Typical 2 µA power‑down current helps reduce system standby power in battery‑sensitive designs.

Why Choose EN35QX512A-104HIP(2S)?

The EN35QX512A-104HIP(2S) delivers a balanced combination of high storage density, flexible SPI performance and industrial temperature capability in a compact, surface‑mount package. Its uniform sector architecture, robust protection features and proven endurance make it well suited for embedded systems that require secure firmware storage and in‑field update capability.

Designers and procurement teams will find this device appropriate for applications demanding reliable non‑volatile memory with configurable SPI throughput, low standby power and long data retention backed by ESMT's serial flash feature set.

Request a quote or submit an inquiry to receive pricing and availability information for the EN35QX512A-104HIP(2S).

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