EN35QX512A-104FIP(2S)

512Mb SPI NOR Flash Ind.
Part Description

512 Mbit SPI NOR Flash (16-pin SOP 300mil) – Industrial

Quantity 252 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package16-pin SOP 300milMemory FormatDRAMTechnologySPI NOR Flash
Memory Size512 MbitAccess Time8 nsGradeIndustrial
Clock Frequency104 MHzVoltage2.5VMemory TypeNon-Volatile
Operating Temperature-40°C – 85°CWrite Cycle Time Word Page500 µsPackaging16-pin SOP 300mil
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization64M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.00.71

Overview of EN35QX512A-104FIP(2S) – 512 Mbit SPI NOR Flash (16-pin SOP 300mil) – Industrial

The EN35QX512A-104FIP(2S) is a 512 M-bit serial NOR Flash memory device built on SPI serial architecture. It offers high-density, non-volatile storage organized as 64M × 8 with 256-byte programmable pages and uniform 4-Kbyte sectors, suitable for embedded and industrial systems that require in-system programmability and reliable code/data retention.

With single/dual/quad SPI I/O, fast read clock support and hardware/software write-protect features, this device targets applications needing flexible update strategies, block-level protection and long-term data retention across an industrial temperature range.

Key Features

  • Memory Capacity & Organization — 512 M-bit capacity (64M × 8) providing 65,536 KByte of serial Flash with 256-byte programmable pages and 262,144 programmable pages in total.
  • Serial SPI Interface & Modes — SPI-compatible single, dual and quad I/O support with standard pins (CLK, CS#, DI, DO, WP#, HOLD#) and multi-bit I/O (DQ0–DQ3) for flexible system integration.
  • High-Speed Read — Fast Read operation up to 104 MHz for Single/Dual/Quad I/O, enabling efficient code and data fetch in performance-sensitive designs.
  • Program/Erase Performance — Typical page program time 0.5 ms; sector erase ~40 ms; block and chip erase times provided for rapid field updates and manufacturing programming.
  • Power & Reliability — Low-power operation with typical active current ~14 mA and typical suspend/power-down current ~2 μA; supports a full operating voltage range of 2.7–3.6 V.
  • Sector Architecture & Flexibility — Uniform 4-Kbyte sectors (16,384 sectors) plus 32-Kbyte and 64-Kbyte block organization, allowing individual sector or block erase operations.
  • Protection & Security — Software and hardware write protection with WP# pin, volatile status register bits, and a lockable 3 × 512-byte OTP security sector for secure storage of critical data.
  • Endurance & Data Retention — Minimum 100K program/erase cycles per sector and data retention specified at 20 years.
  • Package & Temperature — Supplied in a 16-pin SOP 300 mil package and rated for industrial temperature range (−40 °C to 85 °C).
  • Standards & Features — Supports SFDP (Serial Flash Discoverable Parameters), Read Unique ID, and both 3-byte and 4-byte addressing modes for large-memory addressing.

Typical Applications

  • Embedded Firmware Storage — Store and execute firmware with in-system programmability and fast read performance for boot code and application code storage.
  • Field Updates & Code Patching — Enable module-level updates or patches by unprotecting specific sectors or blocks while keeping other regions protected.
  • Industrial Control Systems — Non-volatile configuration and code storage across −40 °C to 85 °C; suitable for industrial equipment requiring reliable retention and endurance.
  • Secure Data & Configuration Storage — Protect critical calibration data or device-specific IDs using the lockable OTP sector and hardware write-protect features.

Unique Advantages

  • Large, Uniform Sector Layout: 4-Kbyte uniform sectors allow fine-grained erase and update operations without requiring large block erases.
  • Multi-Mode SPI Flexibility: Standard, Dual and Quad SPI support lets designers balance pin count and throughput to match system requirements.
  • Fast Read Throughput: 104 MHz Fast Read capability for Single/Dual/Quad I/O accelerates code fetch and data transfer in embedded systems.
  • Robust Program/Erase Characteristics: Typical page program time of 0.5 ms and defined sector/block/chip erase times support efficient manufacturing and field reprogramming.
  • Low-Power Standby and Active Operation: Typical 14 mA active current and ~2 μA power-down current reduce system power draw during active and standby modes.
  • Durability and Longevity: Specified minimum 100K program/erase cycles per sector and 20-year data retention support long-term deployment needs.

Why Choose EN35QX512A-104FIP(2S)?

The EN35QX512A-104FIP(2S) combines high-density serial NOR Flash capacity, flexible SPI I/O modes and an industrial operating range to deliver a practical, reliable storage solution for embedded and industrial designs. Its uniform 4-Kbyte sector architecture, robust program/erase performance and hardware/software write-protect mechanisms make it well suited for systems that require in-field updates, secure configuration storage and long-term data retention.

This device is ideal for engineers designing systems that demand compact board-level footprint (16-pin SOP 300 mil), predictable program/erase characteristics, and broad SPI compatibility for easy integration into existing SPI-based memory subsystems.

Request a quote or contact sales to get pricing, availability and lead-time details for EN35QX512A-104FIP(2S).

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